Browsing by Author "RAY-HUA HORNG"

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LIGHT EMISSION DIODE WITH FLIP-CHIP STRUCTURE AND MANUFACTURING METHOD THEREOF
(2019-02-14)
RAY-HUA HORNG
;
RAY-HUA HORNG
;
HUAN-YU CHIEN
A light emitting diode device with flip-chip structure includes a transparent protective substrate, a transparent conductor layer, a glue layer, a group III-V stack layer, a first conductivity metal electrode, a second conductivity metal electrode and an insulating layer. The transparent conductor layer is formed on the transparent protective substrate. The glue layer bonds the transparent protective substrate and the transparent conductor layer. The group III-V stack layer and the first conductivity metal electrode are respectively formed on a first portion and a second portion of the transparent conductor layer. The second conductivity metal electrode is formed on a portion of the group III-V stack layer. The insulating layer covers exposed portions of the transparent conductor layer and the group III-V stack layer, and the insulating layer further covers portions of the first and second conductivity metal electrodes, so as to expose the first and second conductivity metal electrodes.
METHOD FOR MANUFACTURING WIDE-BANDGAP OXIDE EPITAXIAL FILM
(2019-03-14)
RAY-HUA HORNG
;
YEN-CHU LI
;
CHUN-YI TUNG
;
SI-HAN TSAI
;
LI-CHUNG CHENG
The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.
SOLAR-BLIND DETECTING DEVICE WITH WIDE-BANDGAP OXIDE
(2019-03-14)
RAY-HUA HORNG
;
YEN-CHU LI
;
CHUN-YI TUNG
;
SI-HAN TSAI
;
LI-CHUNG CHENG
The present invention provides a solar-blind detecting device with a wide-bandgap oxide, which comprises an oxide epitaxial sensing layer disposed on a substrate for improving the property as well as substantially increasing the photocurrent in the oxide epitaxial sensing layer under the stimulation of ultraviolet light. Particularly, the sensing performance for the deep ultraviolet region (200˜280 nanometers) is enhanced significantly.