Browsing by Author "SHEU, JY"

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SIZE EFFECT ON THE ELECTRICAL-CONDUCTION AND NOISE OF RUO2-BASED THICK-FILM RESISTORS
(1992-12-01)
CHIOU, BS
;
SHEU, JY
;
WU, WF
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Temperature dependence of sheet resistance for a generic RuO2-based resistor with a composition of 20 wt.% RuO2-80 wt.% glass (63 wt.% PbO-25 wt.% B2O3-12 wt.% SiO2) is evaluated. A combined tunnel/parallel conduction model is employed to describe the resistance behavior with respect to the temperature variation. The geometry of the resistive film, such as the aspect ratio and thickness, cast a significant effect on the electrical characteristic of the thick film assembly. It is observed that shorter resistive films exhibit smaller resistivity as compared to that of the longer film. Thinner resistive films have smaller resistivity as compared to the thicker ones. In addition, 1/f noise is the dominating contribution in the thick film resistor. The presence of 1/f noise can be qualitatively explained with the aid of the tunneling mechanism.
TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTION IN RUO2-BASED THICK-FILM RESISTORS
(1992-06-01)
CHIOU, BS
;
SHEU, JY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this paper, the temperature dependence of resistance of two generic RUO2-based resistors is investigated. The resistor compositions studied are 80 wt.% glass (63 wt.% PbO - 25 wt.% B2O3 - 12 wt.% SiO2, designated as G1) - 20 wt.% RuO2 and 80 wt.% glass (55.5 wt.% PbO - 22 wt.% B2O3 - 10.5 wt.% SiO2 - 12 wt.% Al2O3, designated as G2) - 20 wt.% RuO2. The sheet resistance of resistor 80 wt.% Gl - 20 wt.% RuO2 fired at 850-degrees-C decreases as the temperature is increased from 100 K to approximately 400 K, remains a minimum value at temperatures 400 K approximately 690 K, and then increases as the temperature is further raised. A negative temperature coefficient of resistance (TCR) of approximately -480 ppm/degrees-C is obtained from 100 K to 500 K. The TCR becomes less negative when temperature increases. Three models for conduction mechanism of thick film resistors are employed to explain the experimental results. A modified model, consisting of both tunneling and parallel conduction approaches, is proposed to elucidate the change in slope in the resistance-inverse temperature curve as well as the temperature dependence of the resistance. In addition, an equivalent circuit model is proposed to describe the electrical behavior of the thick film resistors.