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Browsing by Author "SHIEH, HM"

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    HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES
    (1995-01-01)
    KAO, MJ
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    HSU, WC
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    SHIEH, HM
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    LIU, WC
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    CHANG, CY
    Double-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by delta-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10(13) cm-2 along with an enhanced mobility of 2100 cm2/V.s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.