Browsing by Author "SHIH, YT"

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EXCITON BINDING-ENERGY IN A GAAS/ALXGA1-XAS QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD
(1991-10-15)
CHUU, DS
;
SHIH, YT
;
電子物理學系
;
Department of Electrophysics
The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained.
FINITE-CONICAL-WELL MODEL FOR VERTICALLY ADSORBED DIATOMIC-MOLECULES
(1995-05-15)
SHIH, YT
;
CHUU, DS
;
MEI, WN
;
電子物理學系
;
光電工程研究所
HIGH ORIENTATION CDS THIN-FILMS GROWN BY PULSED LASER AND THERMAL EVAPORATION
(1992-05-01)
DAI, CM
;
HORNG, L
;
HSIEH, WF
;
SHIH, YT
;
TSAI, CT
Undoped CdS films have been grown by pulsed laser evaporation (PLE) and thermal evaporation (TE) techniques on Corning's 7059 glass at a substrate temperature between room temperature and 250-degrees-C. The deposition rates are 0.07 angstrom/s for PLE and 60 angstrom/s for the TE technique. These as-deposited films have high (002) preferred orientation by both techniques even without preheating the substrate. However, films deposited by PLE have more preferred orientation and larger grain size. These features make the PLE films have sharper Raman peaks, smaller Raman shift of surface mode and more overtones of longitudinal optical phonon mode observed than those in TE films. The transparency of PLE or TE films for wavelengths which are larger than that of absorption edge is around 90% on average.