Browsing by Author "SU, AN"

Now showing 1 - 2 of 2

ENHANCED OXYGEN REACTIVE ION ETCHING RESISTANCE OF DIAZONAPHTHOQUINONE-POLY (FORMYLOXYSTYRENE) RESIST SYSTEM BY PHOTOACID CATALYZED PHOTO-FRIES REARRANGEMENT AND POTASSIUM-ION TREATMENT IN AQUEOUS-SOLUTION
(1991-03-01)
LOONG, WA
;
SU, AN
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
This paper presents a new process for the enhancement of oxygen reactive ion etching (RIE) resistance of a single-layer, deep UV resist system by selective incorporating of potassium ion with resist image in aqueous solution after exposure. A resist system of diazonaphthoquinone (DAQ) and poly(p-formyloxystyrene) (PFS) mixed with catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid is exposed to deep UV. Photoacid catalyzes the photo-Fries rearrangement of PFS to form poly(p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic group with C5H11COOK in aqueous solution in exposed area which is resistant to oxygen RIE. There are no such reactions in unexposed area. The dry developed negative-tone patterns by oxygen RIE are obtained.
PROCESSES OF TOP-IMAGED SINGLE-LAYER RESISTS BY POTASSIUM-ION TREATMENT IN SOLUTION
(1991-09-01)
LOONG, WA
;
SU, AN
;
WANG, JL
;
CHU, CY
;
交大名義發表
This paper presents new processes for the enhancement of oxygen reactive ion etching (RIE) resistance of two single-layer resist systems by selective incorporation of potassium ions into the resist image in solution after exposure. One resist system is diazonaphthoquinone (DAQ) and poly(p-formyloxystyrene) (PFS) mixed with a catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid generator. After deep-UV exposure, the photoacid catalyzes the photo-Fries rearrangement of PFS to form poly(p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic groups with C5H11COOK in aqueous solution in exposed areas which are resistant to oxygen RIE. Dry developed negative-tone patterns are obtained by oxygen RIE. The other resist system is AZ1350J, dipping in C23H47COOK in hexane after deep-UV exposure. C23H47COOK selectively incorporates into unexposed areas only. Dry developed positive-tone patterns are obtained by oxygen RIE in this case.