Browsing by Author "SUN, SC"

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A NOVEL APPROACH FOR LEAKAGE CURRENT REDUCTION OF LPCVD TA(2)O(5) AND TIO(2) FILMS BY RAPID THERMAL N(2)O ANNEALING
(1994)
SUN, SC
;
CHEN, TF
;
奈米中心
;
Nano Facility Center
CHARACTERIZATION OF CHEMICAL-MECHANICAL POLISHING DIELECTRICS FOR MULTILEVEL METALLIZATION
(1994)
SUN, SC
;
YEH, FL
;
TIEN, HZ
;
奈米中心
;
Nano Facility Center
CHARACTERIZATIONS OF OXIDE GROWN BY N2O
(1993-10-01)
CHAO, TS
;
CHEN, WH
;
SUN, SC
;
CHANG, HY
;
電控工程研究所
The constitution of N2O oxide has been investigated by using Auger analyses, ellipsometry measurement, and Fourier transform infrared (FTIR) spectroscopy in this paper. We found a nitrogen-rich layer formed at the interface of SiO2/Si by Auger analyses. From the results of ellipsometry, we found the thinner the N2O oxide, the larger the refractive index. A two-layer model construction of N2O oxide was proposed for modeling the interfacial layer. We found that this layer thickness is 14 to 20 angstrom when the refractive index was set to 1.77. FTIR analyses show that some of the Si-O bonds were replaced by Si-N bonds. This is the reason that N2O oxide has better electrical properties and a lower growth rate than those of the conventional dry 02 oxide.
COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUM
(1994-12-15)
SUN, SC
;
TSAI, MH
;
交大名義發表
;
奈米中心
;
National Chiao Tung University
The attributes and limitations of chemically vapor-deposited titanium nitride films from the reaction of tetrakis-diethylamino-titanium with ammmonia and tetrakis-dimethylamino-titanium with ammonia are discussed. Deposited films were characterized by growth rate, resistivity, surface morphology and step coverage over contact structures. Films deposited without ammonia flow were unstable in the atmosphere and Auger analysis showed a higher relative carbon content. It was found that the deposition pressure had a stronger effect than did the deposition temperature on the bulk resistivity and surface roughness. A higher pressure has a tendency to reduce the resistivity. Films appear smooth at low deposition temperatures and low pressures. Films become rough at high deposition temperatures and high pressures. The deposition process and resulting TiN layers are successfully integrated in a chemcially vapor-deposited W plus fill application.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
RAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2O
(1994)
SUN, SC
;
WANG, LS
;
YEH, FL
;
LAI, TS
;
LIN, YH
THERMAL-OXIDATION OF LIGHTLY-DOPED AND HEAVILY-DOPED SILICON IN PURE N2O
(1993)
SUN, SC
;
CHANG, HY
;
奈米中心
;
Nano Facility Center