Browsing by Author "Sang, JY"

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Drain/gate-voltage-dependent on-current and off-current instabilities in polycrystalline silicon thin-film transistors under electrical stress
(2005-09-01)
Wang, SD
;
Chang, TY
;
Lo, WH
;
Sang, JY
;
Lei, TF
The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various stress conditions. The stress-induced device degradation was studied by measuring the dependences Of I(on) and I(off) on the drain/gate voltages. From the results, dissimilar variations in I(on) and I(off) were observed. The differences can be attributed to the variances in the amount of trap charges in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. A comprehensive model for the degradation Of I(on) and I(off) in poly-Si TFTs under various electrical stress conditions was suggested.
Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors
(2006-04-01)
Shieh, MS
;
Sang, JY
;
Chen, CY
;
Wang, SD
;
Lei, TF
We demonstrate the fabrication process and the electrical characteristics of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) with different numbers of channel stripes.-The device's electrical characteristics, such as on-current, threshold voltage, and subthreshold swing, were improved by increasing the number of channel stripes due to the enhancement of gate control. However, the electric field strength near the drain side was enlarged in multi-channel structures, causing severe impact ionization. The degradation of device's reliability under various electrical stress conditions was suggested.
Performance and reliability of poly-Si TFTs on FSG buffer layer
(2005-07-01)
De Wang, S
;
Chang, TY
;
Chien, CH
;
Lo, WH
;
Sang, JY
A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.