Browsing by Author "Santiago, Svette Reina Merden S."
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Item type:Item, Enhanced Conversion Efficiency of III-V Triple-junction Solar Cells with Graphene Quantum Dots(2016-12-16) ;Lin, Tzu-Neng ;Santiago, Svette Reina Merden S. ;Zheng, Jie-An ;Chao, Yu-ChiangYuan, Chi-TsuGraphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to theItem type:Item, P-Type Doping of WS2 Quantum Dots via Pulsed Laser Ablation(2018-12-01) ;Caigas, Septem P. ;Cheng, Min-Chiang ;Lin, Tzu-Neng ;Santiago, Svette Reina Merden S.Yuan, Chi-TsuDoping provides an advantage to engineering the optical and electrical characteristics of transition-metal dichalcogenides (TMDs). Here, we report the doping of WS2 quantum dots (QDs) with diethylenetriamine (DETA) using pulsed laser ablation. The synthesized DETA-doped 2H-WS2 QDs with an average size of similar to 6 nm have been demonstrated by transmission electron microscopy. With the introduction of DETA during pulsed laser ablation, current modulation, carrier concentration, and field-effect mobility are greatly enhanced, demonstrating a successful doping in WS2 QDs. The positive shift of the threshold voltage in gate dependent conductance measurements reveals p-type doping for DETA-doped WS2 QDs. A remarkable improvement in photoluminescence in WS2 QDs by 74-fold has been achieved after DETA doping. An anomalous dopant-dependent negative photoconductivity was observed for WS2 QDs, originating from light-induced desorbing of water (oxygen) molecules on the surface. The proposed doping approach can provide a vehicle to modulate the optical and electrical properties in WS2 QDs and could be important in the performance improvement of WS2-QD-based devices.