Browsing by Author "Sarukura, N"
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Item type:Item, Efficient terahertz radiation generation from a bulk InAs mirror as an intracavity terahertz radiation emitter(2000-04-15) ;Liu, ZL ;Ono, S ;Ohtake, H ;Sarukura, NLiu, TATerahertz (THz) radiation is generated efficiently from a bulk InAs mirror with a shallow incidence angle inside the cavity of a femtosecond, mode-locked Ti:sapphire laser self-started by a strained saturable Bragg reflector A magnetic field is also applied to the InAs mirror to enhance THz radiation.Item type:Item, Generation of THz radiation from resonant absorption in strained multiple quantum wells in a magnetic field(2001-07-01) ;Liu, TA ;Huang, KF ;Pan, CL ;Ono, SOhtake, HOptically excited THz-radiation from ten molecular-beam epitaxy (MBE)-grown strained multiple quantum wells (MQWs) on a (100)-oriented semi-insulating GaAs substrate is studied in a 1-T magnetic field. Wavelength-dependent THz-radiation clearly exhibits a resonance behavior at the excitation wavelength near 830 nm, the peak wavelength of photoluminescence (PL). We also observe and explain an emission spectrum from the MQW with slightly enhanced higher-frequency components compared to that of bulk GaAs. In the thin MQW sample, the THz emission is still significant. This indicates the possibility of designing MQWs as efficient THz emitters in the future.Item type:Item, Generation of THz-radiation from resonant absorption in strained multiple-quantum-well in a magnetic field(2001) ;Liu, TA ;Pan, CL ;Huang, KF ;Ono, SOhtake, HWavelength dependent THz-radiation from strained multiple-quantum-well by a 1-T magnetic field had shown the clear resonance behavior near the Photo-luminescence Peak. Comparisons with bulk Semi-insulating GaAs will also be presented.Item type:Item, High average power mode locked Ti : Sapphire laser with intracavity continuous-wave amplifier and strained saturable Bragg reflector(1999-10-01) ;Liu, TA ;Huang, KF ;Pan, CL ;Liu, ZLOhtake, HWe demonstrate a new scheme for the generation of high average power femtosecond pulses by incorporating an intracavity amplifier and a strained saturable Bragg reflector with low saturation fluence for self-starting mode locking. When the Ti:sapphire oscillator and intracavity amplifier are pumped at 10W and 15W, respectively, the average output power is as high as 1.62 W. The pulse duration is about 145 fs, and the peak power reaches 160 kW at a 68 MHz repetition rate: The pulse-formation time of 400 mu s is sufficiently short to sustain stable mode locking.Item type:Item, THz radiation from intracavity saturable Bragg reflector in magnetic field with self-started mode-locking by strained saturable Bragg reflector(1999-11-15) ;Liu, TA ;Huang, KF ;Pan, CL ;Liu, ZLOno, SWe demonstrate a new configuration for intracavity generation of THz radiation. A magnetic-field-biased saturable Bragg reflector (SBR) located inside the femtosecond laser cavity is the emitter, while a strained saturable Bragg reflector (SSBR) achieves self-started mode-locking without focusing. The calibrated power of the emitted THz radiation is estimated to be approximately 45 nW with a peak frequency at 0.72 THz and width of approximately 0.7 THz under a 0.88 T magnetic field. The quadratic dependence of THz-radiation power by the SBR on the magnetic field is also observed for the first time.