Browsing by Author "Seo, H. W."

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InN nanotips as excellent field emitters
(2008-03-24)
Wang, K. R.
;
Lin, S. J.
;
Tu, L. W.
;
Chen, M.
;
Chen, Q. Y.
Unidirectional single crystalline InN nanoemitters were fabricated on the silicon (111) substrate via ion etching. These InN nanoemitters showed excellent field emission properties with the threshold field as low as 0.9 V/mu m based on the criterion of 1 mu A/cm(2) field emission current density. This superior property is ascribed to the double enhancement of (1) the geometrical factor of the InN nanostructures and (2) the inherently high carrier concentration of the degenerate InN semiconductor with surface electron accumulation layer induced downward band bending effect that significantly reduced the effective electron tunneling barrier even under very low external field. (c) 2008 American Institute of Physics.
Interfacial reactions of Pt-based Schottky contacts on nGaP
(2008-02-25)
Chu, L. H.
;
Chang, E. Y.
;
Wu, Y. H.
;
Huang, J. C.
;
Chen, Q. Y.
We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm-thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 degrees C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 degrees C for 10 min. Prolonging the annealing to 3 h led to formation of Ga(2)Pt and GaPt(3) phases in InGaP and Schottky diodes degraded after these new phases were observed. (C) 2008 American Institute of Physics.