Browsing by Author "Shahroury, Fadi R."

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Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end
(2009-03-01)
Wu, Chung-Yu
;
Wang, Wen-Chieh
;
Shahroury, Fadi R.
;
Huang, Zue-Der
;
Zhan, Hao-Jie
A new high frequency CMOS current-mode receiver front-end composed of a current-mode low noise amplifier (LNA) and a current-mode down-conversion mixer has been proposed in the frequency band of 24 GHz and fabricated in 0.13-mu m 1P8M CMOS technology. The measurement of the current-mode receiver front-end exhibits a conversion gain of 11.3 dB, a noise figure (NF) of 14.2 dB, the input-referred 1-dB compression point (P-(1) (dB)) of -13.5 dBm and the input-referred third-order intercept point (P (IIP3)) of -1 dBm. The receiver dissipates 27.8 mW where the supply of LNA is 0.8 V and the supply of mixer is 1.2 V. The power consumption of output buffer is not included. The receiver front-end occupies the active area of 1.45 x 0.72 mm(2) including testing pads. The measured results show that the proposed current-mode approach can be applied to a high-frequency receiver front-end and is capable of low-voltage applications in the advanced CMOS technologies.
The design of integrated 3-GHz to 11-GHz CMOS transmitter for full-band ultra-wideband (UWB) applications
(2008)
Wang, Wen-Chieh
;
Liao, Chang-Ping
;
Lo, Yi-Kai
;
Huang, Zue-Der
;
Shahroury, Fadi R.
The CMOS integrated 3-GHz to 11-GHz transmitter for full-band UWB applications is proposed and designed in 0.13-mu m CMOS technology. The designed UWB transmitter is integrated with a 2:1 frequency divider, a quadrature up-conversion mixer, a balanced RF amplifier, and a 3-stage cascaded poly-phase filter. The technique of inductance peaking has been adopted to achieve 14-band operation for UWB applications. The transmitter has an average conversion gain of 12.8 dB with the gain ripple of around +/- 1.4 dB among the whole frequency band. The average input 1-dB compression point (IP(-1dB)) of the 14 bands is -12.2 dBm and the average output 1-dB compression point (OP-(1dB)) of the 14 bands is -0.4 dBm. The transmitter dissipates the power of 53.1 mW from the supply 2 voltage of 1.2 V and occupies the chip area of 1930X1635 mu m(2). This chip is designed in 0.13-mu m 1P8M CMOS technology and under fabrication.