Browsing by Author "She, NJ"

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Enhanced electron emission from phosphorous- and boron-doped diamond-clad Si field emitter arrays
(1996-12-15)
Ku, TK
;
Chen, SH
;
Yang, CD
;
She, NJ
;
Tarntair, FG
A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma chemical vapor deposition (MPCVD) has been developed to improve the characteristics of electron field emission from the pure Si tips. A uniform and smooth coating morphology for the diamond-clad Si tips have been achieved. Electron emission currents of diamond-clad tips are much higher than those of pure Si tips. Such great improvement is attributed to the lowering of the effective work function in the diamond-clad tips. The effects of phosphorus- and boron-doped diamond-clad Si tips have been also studied in comparison with the undoped ones. The current-voltage characteristics of the undoped diamond-clad tips were further enhanced by the in-situ doping of phosphorus or boron due to a higher electron supplement. Moreover, the P-doped diamond-clad tips show a better field emission performance as compared to the B-doped ones. This difference is surmised to be associated with the higher electron conductivity and defect densities of P-doped diamond films.
Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays
(1996-05-01)
Ku, TK
;
Chen, SH
;
Yang, CD
;
She, NJ
;
Wang, CC
Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function, Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones, After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities.
Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii
(2000-02-01)
Tarntair, FG
;
Hong, WK
;
Ku, TK
;
She, NJ
;
Chen, CF
Various types of ultra sharp Si microtips and multitips with carbon-clading films were fabricated by microwave plasma chemical vapor deposition (MPCVD). The radii of these Si tips prepared by bias assisted carburization (BAC) can he reduced below 300 Angstrom under a low deposition temperature (<550 degrees C). Field emission characterization was performed in a high vacuum environment. With an applied anode voltage of 1100 V, emission currents of 169 mu A, 198 mu A, and 385 mu A can be achieved from an array of 50 x 50 BAG-clad Si monotips, Si multitips via high bias, and Si multitips via the Ar presputtering technique, respectively. Both the auger electron spectroscopy (AES) and X-ray photo-electron spectroscopy (XPS) studies of the C l s peak suggest that the BAC-cladding is more likely to be a carbon-rich SiC layer or a SiC layer mixed with a small amount of diamond nuclei. This BAC-carbon can be used as an effective nucleation layer for further diamond nuclei. Due to the low field emission, low temperature, and large area growth capability, the sharp BAC-clad Si multitip field emitter arrays are attractive Tor flat panel display applications.
Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.
(1996)
Ku, TK
;
Chen, SH
;
Yang, CD
;
She, NJ
;
Tarntair, FG
In order to take the advantages of diamond and carbon coating on flat-panel display, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BEN-carburized Si tips can be reduced below 300 Angstrom under low deposition temperature (<550 degrees C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultra-sharp DLC-clad Si FEAs with enhanced emission ability.