Browsing by Author "Sheen, CS"

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A highly sensitive CMOS compatible thermal-type microsensor
(1999)
Sheen, CS
;
Chen, CN
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光電工程學系
;
Department of Photonics
A CMOS compatible thermal-type microsensor was fabricated with large sensitive area and ultra-low solid thermal-conductance. To reach high performance, a floating circular membrane with diameter, 460 mu m and lead length, 393 mu m, was formed after anisotropic etching the silicon substrate. The large membrane is well supported with four curved leads, which greatly release the residual stress. The highly sensitivity is reached by the extremely low solid conductance (10(-6) W/C), which is lower than the published data; the large active area give better response than other works. Output voltage versus frequency was measured and thermal conductance was characterized by DC method.
A new fiber-communication miniature sensor module
(2000)
Sheen, CS
;
Chi, S
;
光電工程學系
;
Department of Photonics
Sensing using multi-chip package for optical sensing device enjoys the benefits of both optics and integrated circuits. By including the advent of MEMS technologies it can potentially lead to a new generation of miniaturized optical sensing devices and system. We propose and fabricate a miniaturized radiation-sensing module, which transfer the output analog signal to a light signal and it can be easily delivered through a single mode fiber. It consists of an infrared sensing thermopile, an ASIC chip and a LED, which acts as an electric-optical signal transfer component. Details of these components design, fabrications, experimental results are presented in this paper.
A new process technique for complementary metal-oxide-semiconductor [CMOS] compatible sensors
(2001)
Sheen, CS
;
Chi, S
;
光電工程學系
;
Department of Photonics
A new sacrificial-etching-window (SEW) structure is reported for the first time, which can be used for most complementary metal-oxide-semiconductor (CMOS) compatible sensor structures. Using a buried sacrificial layer, the etching windows of the substrate can be extended beneath the membrane. The SEW technique combines the advantages of both surface micromachining by using a sacrificial layer structure and bulk micromachining by anisotropic etching of a silicon substrate. Using the SEW structure, one can speed up the etching rate and design a larger membrane with a larger active area. Several sensors are fabricated by 1.2 mum industrial CMOS IC technologies combined with subsequent anisotropic front-side etching stops. Three kinds of SEW thermoelectric sensors are reported in this paper, and the characteristics of the sensors are analyzed and measured.
A novel modeling technique for efficiently computing 3-D capacitances of VLSI multilevel interconnections BFEM
(1998-01-01)
Hou, HM
;
Sheen, CS
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An efficient method is presented to model the parasitic three-dimensional (3-D) capacitance of VLSI multilevel interconnections. Based on the boundary-finite-element method (BFEM) of integral formulation, arbitrary triangle elements on the surface of conductors for charge distribution are used to efficiently calculate capacitances of both parallel conductors and complicated configurations such as crossing Lines, corners, contacts, and their combinations, Using an adaptive multilevel Green's function and low-order polynomials as shape function, we apply the Galerkin principle over finite elements, and most of the surface integrals of charge distribution can be evaluated analytically and the singular integrals can be eliminated by choosing proper coordinate transformation, Moreover, an even less complex and more general method for arbitrary geometry configuration of multilevel interconnection lines is proposed in order to Link with the finite element pre-processor in present CAD tools.
A novel transient simulation for 3-D multilevel interconnections on complex topography
(1999-04-01)
Hou, HM
;
Sheen, CS
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An efficient method is presented to model the transient characteristics of distributed resistor-capacitor of ULSI multilevel interconnections on complex topography, in which the reformulation of the boundary-element method (BEM) and the Pade-via-Lanczos (PVL) algorithm associated with multilayer Green's function can avoid the redundant works on both volume mesh and transient analysis associated with the finite-difference method. An adaptive multilayer Green's function is adopted to investigate several cases that have revealed interesting physical mechanisms in charge transfer between conductors on multilayer topography. To improve the timing analysis efficiency of the finite-difference method, the dominant poles are obtained by introducing the PVL algorithm for model-ol der reduction. Hence, it is easy to calculate the transient characteristics of both parallel conductors and complicated configurations such as crossing lines, corners, contacts, multilayers, and their combinations.
Analysis of optimal bolometer sensitivity with linear approximation
(1996)
Shie, JS
;
Chen, YM
;
Sheen, CS
;
光電工程學系
;
Department of Photonics
Parameter extraction of resistive thermal microsensors by AC electrical method
(1997)
Mang, OY
;
Sheen, CS
;
Shie, JS
;
交大名義發表
;
光電工程學系
Device parameters of thermal microsensors are essential for evaluating the sensor performances and their simulation modeling. We report an A.C. electrical method for extracting these parameters experimentally with relatively simple instrumentation. The basic parameters of resistive microsensors, the resistance, temperature coefficience of resistance, thermal capacitance and conductance, are derivable from the second harmonic signal of the output voltage induced by a sinusoidal driving current. The results obtained are compared with other methods.
Parameter extraction of resistive thermal microsensors by AC electrical method
(1998-04-01)
Ou-Yang, M
;
Sheen, CS
;
Shie, JS
;
光電工程學系
;
Department of Photonics
Obtaining device parameters of thermal microsensors is essential for evaluating their performances and simulation modeling. We report an sc electrical method for extracting these parameters experimentally with relatively simple instrumentation. The basic parameters of resistive microsensors, the resistance, temperature coefficient of resistance, thermal capacitance, and conductance, are derivable from the second harmonic signal of the output voltage induced by a sinusoidal driving current. The results are compared with other methods.