Browsing by Author "Shen, KY"

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A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET
(1997)
Wang, TH
;
Chiang, LP
;
Chang, TE
;
Zous, NK
;
Shen, KY
We have proposed a new measurement technique to characterize the hot carrier stress generated oxide traps in a n-MOSFET by measuring subthreshold current. In this technique, a specially designed measurement consisting of a series of oxide charge detrapping and subthreshold current measurement phases was performed. An analytical model accounting for the temporal evolution of subthreshold current due to oxide charge detrapping was derived. Our study shows that this method is extremely sensitive to an oxide charge variation. By using this method, the oxide trap growth rates by hot electron stress and hot hole stress were measured.
Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transient
(1997-08-25)
Chiang, LP
;
Zous, NK
;
Wang, TH
;
Chang, TE
;
Shen, KY
A technique to characterize oxide charge detrapping in a Fowler-Nordheim stressed n-metal-oxide-semiconductor field effect transistor is proposed. This technique consist of two alternating phases, an oxide charge detrapping phase and a subthreshold current measurement phase. An analytical model relating a subthreshold current transient to oxide charge density and detrapping time constants was derived. By varying the gate bias in the detrapping phase and the ambient temperature, the field and temperature dependences of oxide charge detrapping can be obtained from the subthreshold current transients measured. (C) 1997 American Institute of Physics.