Browsing by Author "Shen, Shih-Guo"

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Growth of free-standing GaN layer on Si(111) substrate
(2009-03-15)
Yang, Tsung Hsi
;
Ku, Jui Tai
;
Chang, Jet-Rung
;
Shen, Shih-Guo
;
Chen, Yi-Cheng
This investigation demonstrates the epitaxial growth of a free-standing GaN layer on Si(1 1 1) using a funnel-like GaN nano-rod buffer structure. The funnel-like GaN nano-rods were directly grown on Si substrates by RF-plasma molecular beam epitaxy. Free-standing GaN layers were achieved through the coalescence of funnel-like GaN nano-rods by the metalorganic chemical vapor deposition. This study examines the structure, optical characteristics and stress of GaN nano-rods and free-standing GaN layers. The c-axis lattice constant of the strain-free Ga-face GaN layer on Si is 5.1844 angstrom, as determined by high-resolution X-ray diffraction. The fully relaxed band edge at 3.468 eV without deep-level emission around 2.3 eV, was revealed in a free-standing GaN layer on Si, using photoluminescence. (C) 2008 Elsevier B.V. All rights reserved.
Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate
(2009-04-16)
Chang, Chun-Yen
;
Yang, Tsung-Hsi
;
Shen, Shih-Guo
GaN layer on semiconductor substrate is grown by using GaN nanorod buffer layer. Firstly, semiconductor substrate is cleaned and thermally degassed to remove the contaminant in the growth chamber. After the above step, the GaN nanorods layer is grown under the N-rich condition. Then, GaN epilayer is overgrown on the GaN nanorods layer under the Ga-rich condition for forming Group of III-Nitrides semiconductor layer on the semiconductor substrate.