Browsing by Author "Shen, Shih-Wen"

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Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels
(2006-10-01)
Lin, Horng-Chih
;
Lee, Ming-Hsien
;
Su, Chun-Jung
;
Shen, Shih-Wen
;
電子工程學系及電子研究所
The performance of thin-film transistors with a novel poly-Si nanowire channel prepared by solid-phase crystallization is investigated in this paper. As compared with conventional planar devices having self-aligned source/drain, the new devices show an improved ON-current per unit width and better control over the short channel effects. The major conduction mechanism of the OFF-state leakage is identified as the gate-induced drain leakage, and it is closely related to the source/drain implant condition and the unique device structure.
Improving electrical properties and thermal stability of (Ba,Sr)TiO3 thin films on Cu(Mg) bottom electrodes
(2006-06-01)
Tsai, Kou-Chiang
;
Wu, Wen-Fa
;
Chao, Chuen-Guang
;
Lee, Jain-Tsai
;
Shen, Shih-Wen
Cu(Mg) alloy films have replaced pure Cu as bottom electrodes for (Ba,Sr)TiO3 (BST) capacitors used in high-frequency devices. A combined BST/Cu(Mg) structure reduced the leakage current density to 3.0 x 10(-8) A/cm(2) at 1 MV/cm, and increased the breakdown field from 0.4 to 2.4 MV/cm at 10(-6) A/cm(2), from the corresponding values of the BST/Cu structure. High-quality characteristics probably follow the formation of a self-aligned MgO layer following the deposition of a Cu(Mg) alloy by annealing in an oxygen ambient, yielding an electrode with an excellent diffusion barrier and electrical characteristics, which is therefore effective in a BST thin-film capacitor. Additionally, the bias temperature stress and time-dependent dielectric breakdown in ambient nitrogen at an electric field of up to 2 V at temperatures between 100 and 200 degrees C were considered to accelerate Cu+ ion drift.