Browsing by Author "Shen, Yi-Ling"

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Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering
(2011-02-03)
Hsu, Che-Wei
;
Cheng, Tsung-Chieh
;
Yang, Chun-Hui
;
Shen, Yi-Ling
;
Wu, Jong-Shinn
We deposited a ZnO thin film on a microslide glass substrate at room temperature by employing the RF reactive magnetron sputtering process. Our results revealed that deposition rate decreases by increasing O(2)/(Ar + O(2)) ratio that was caused by two mechanisms. The first mechanism was the reduction of plasma density and, thus, argon ion density; caused by the addition of highly electronegative oxygen. While the second mechanism was target poisoning caused by the oxidation of the target. Additionally, at the O(2)/(Ar + O(2)) ratio of similar to 0.3 and the help of XPS analysis the optimum stoichiometry of ZnO thin film (the highest binding energy and content fraction of O(1) peak (O-Zn bond)) and the best polycrystallinity (the lowest FWHM with largest grain size) was found. (C) 2010 Elsevier B.V. All rights reserved.
Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
(2010)
Luo, Guang-Li
;
Han, Zong-You
;
Chien, Chao-Hsin
;
Ko, Chih-Hsin
;
Wann, Clement H.
Ge films were epitaxially grown on GaAs(100) substrates and Ga(0.88)In(0.12)As(100) virtual substrates using an ultrahigh vacuum/chemical vapor deposition system. The incubation time of Ge growth depends on Ga(In)As surfaces that were processed by different wet chemical solutions. Growth behaviors, such as island growth at the initial stages and selective growth into recessed regions of GaAs, were studied by transmission electron microscopy. To test the quality of Ge grown on GaAs, an n(+)-Ge/p-GaAs diode was fabricated. We propose that through Ge selective epitaxial growth, Ge can be used as the source-drain of a GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) to overcome some intrinsic limitations of this device. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3246000] All rights reserved.
Investigation of Characteristics of Multi-Function ZnO Thin Film Deposited With Various Argon and Oxygen Ratios
(2009)
Hsu, Che-Wei
;
Cheng, Tsung-Chieh
;
Yang, Chun-Hui
;
Shen, Yi-Ling
;
Wu, Jong-Shin
The ZnO thin film was deposited on a glass substrate at RT by the RF reactive magnetron sputtering method. Structural, chemical, optical, and hydrophilic/hydrophobic properties are measured by using a surface profilometer, an x-ray diffractometry (XRD), an x-ray photoelectron spectroscopy (XPS), a UV-VIS spectrophotometer, and a contact angle system, respectively. Results show that the deposition rate decreases with increasing O(2)/(Ar+O(2)) ratio. In additiion, the best stoichiometric and quality of ZnO thin film was observed at 0.30 Of O(2)/(Ar+O(2)) ratio, which shows the smallest FWHM and the strongest O-Zn strength. Regardless Of O(2)/(Ar+O(2)) ratio effect or thickness effect, high transmittance (> 86%) in the visible region is observed, while the UV-shielding characteristics depend upon both the magnitude of film thickness. The film thickness plays a more prominent role in controlling optical properties, especially in the UV-shielding characteristics, than the O(2)/(Ar+O(2)) ratio. However, the hydrophobic characteristics can be obtained when the glass coating with ZnO thin films. In general, with properly coated ZnO thin film, we can obtain a glass substrate which is highly transparent in the visible region, has good UV-shielding characteristics, and possesses highly hydrophobic characteristics (self-clean capability), which is highly suitable for applications in the glass industries.