Browsing by Author "Shen, Yi-Siang"

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1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
(2016-05-01)
Yeh, Chih-Tung
;
Wang, Wei-Kai
;
Shen, Yi-Siang
;
Horng, Ray-Hua
;
電機學院
Enhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on a Si substrate by fluorine plasma treatment without pre-etching. The threshold voltage shifted from % 8 to 2.3 V, effectively converting the depletion-mode HEMT to the enhancement-mode HEMT. The leakage current was reduced by two orders of magnitude by CF4 plasma treatment. The device exhibited a superior performance with a maximum drain saturation current of 210mA/mm at V-GS = 10V and a peak gain of 44.1mS/mm. A low off-state gate leakage current of 10(-6)mA/mm, ION/IOFF ratio of approximately 10(8), and high breakdown voltage of 1480V were obtained. (C) 2016 The Japan Society of Applied Physics
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
(2016-05)
Yeh, Chih-Tung
;
Wang, Wei-Kai
;
Shen, Yi-Siang
;
Horng, Ray-Hua
;
電機學院
Enhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on a Si substrate by fluorine plasma treatment without pre-etching. The threshold voltage shifted from % 8 to 2.3 V, effectively converting the depletion-mode HEMT to the enhancement-mode HEMT. The leakage current was reduced by two orders of magnitude by CF4 plasma treatment. The device exhibited a superior performance with a maximum drain saturation current of 210mA/mm at V-GS = 10V and a peak gain of 44.1mS/mm. A low off-state gate leakage current of 10(-6)mA/mm, ION/IOFF ratio of approximately 10(8), and high breakdown voltage of 1480V were obtained. (C) 2016 The Japan Society of Applied Physics
Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate
(2017-03-01)
Shen, Yi-Siang
;
Wang, Wei-Kai
;
Horng, Ray-Hua
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < -4.43 V, high off-state breakdown voltage of 378 V, high I-ON/I-OFF ratio of 10(6), and low gate leakage current.