Browsing by Author "Shen, Yu-Shu"

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Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films
(2011-03-01)
Lin, Chun-Chieh
;
Chang, Yi-Peng
;
Ho, Chia-Cheng
;
Shen, Yu-Shu
;
Chiou, Bi-Shiou
A novel material CaCu(3)Ti(4)O(12) (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin-coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.
Effects of annealing temperature on the resistance switching behavior of CaCu(3)Ti(4)O(12) films
(2008-12-01)
Shen, Yu-Shu
;
Chiou, Bi-Shiou
;
Ho, Chia-Cheng
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
In this study, a novel material CaCu(3)Ti(4)O(12) (CCTO), for resistance random access memory application, was prepared by sol-gel method and annealed at various temperatures. The crystallinity and microstructure of CCTO film, improve as annealing temperature increases. The CCTO films annealed at 800 degrees C and above endure more switching cycles (> 1000) and exhibit a small degradation of the resistance ratio between the high resistance state and the low resistance state than those annealed at 700 degrees C do. The correlation between resistance switching behaviors and film microstructure is discussed. (C) 2008 Elsevier B.V. All rights reserved.
Effects of annealing temperature on the resistance switching behavior of CaCu3Ti4O12 films
(2008-12-01)
Shen, Yu-Shu
;
Chiou, Bi-Shiou
;
Ho, Chia-Cheng
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
In this study, a novel material CaCu3Ti4O12 (CCTO), for resistance random access memory application, was prepared by sol-gel method and annealed at various temperatures. The crystallinity and microstructure of CCTO film, improve as annealing temperature increases. The CCTO films annealed at 800 degrees C and above endure more switching cycles (> 1000) and exhibit a small degradation of the resistance ratio between the high resistance state and the low resistance state than those annealed at 700 degrees C do. The correlation between resistance switching behaviors and film microstructure is discussed. (C) 2008 Elsevier B.V. All rights reserved.
Impedance Spectroscopy of CaCu(3)Ti(4)O(12) Films Showing Resistive Switching
(2009-01-01)
Shen, Yu-Shu
;
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
CaCu(3)Ti(4)O(12) (CCTO), for resistance random access memory (RRAM) application, was prepared by the sol-gel method. Our preliminary study indicates that CCTO possesses the resistive switching behaviors of RRAM. In this work, the resistance switching characteristics of CCTO films were investigated. The impedance spectroscopy was applied to CCTO films during the switching cycle. Based on the results observed by impedance spectroscopy, the conduction mechanisms of the CCTO RRAMs at the original, ON, and OFF states were explored.
Impedance Spectroscopy of CaCu3Ti4O12 Films Showing Resistive Switching
(2009-01-01)
Shen, Yu-Shu
;
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
電子工程學系及電子研究所
;
Innovative Packaging Research Center
CaCu3Ti4O12 (CCTO), for resistance random access memory (RRAM) application, was prepared by the sol-gel method. Our preliminary study indicates that CCTO possesses the resistive switching behaviors of RRAM. In this work, the resistance switching characteristics of CCTO films were investigated. The impedance spectroscopy was applied to CCTO films during the switching cycle. Based on the results observed by impedance spectroscopy, the conduction mechanisms of the CCTO RRAMs at the original, ON, and OFF states were explored.