Browsing by Author "Sheu, JD"

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Anomalous selective tungsten growth by chemical vapor deposition
(1996)
Mei, YJ
;
Chang, TC
;
Sheu, JD
;
Yeh, WK
;
Pan, FM
Selective tungsten chemical vapor deposition (W-CVD) is one of the most attractive technique for filling deep submicron contact hole and via hole for the ULSI application. In this work, we firstly find out the anomalous selective W growth for the contact hole. The tungsten only nucleates from the side ring of the contact hole bottom. Several predeposition treatments prior to W growth can improve this anomalous feature and excellently selective W growth can be achieved. Auger electron spectroscopy (AES) is utilized to investigate the interface of Si/W. A model has been proposed to explain this anomalous selective tungsten growth.
Thermal stability and interaction between SiOF and Cu film
(1996)
Mei, YJ
;
Chang, TC
;
Sheu, JD
;
Yeh, WK
;
Pan, FM
In this work, we study the thermal stability and interaction between SiOF and Cu. Blanket SiOF films with various F concentration were deposited by PE-CVD. A dielectric constant as low as 3.2 was obtained. Copper were deposited on these SiOF and a series of post-deposition anneal were performed. Dielectric constant of SiOF was measured after deposition and again after anneal. AES and SIMS depth profile are utilized to determine the interdiffusion between Cu and SiOF under different annealing conditions. Breakdown voltage and dielectric constant were determined form C-V and I-V measurement using a MIS (Cu/SiOF/p-Si) diode. This results of leakage current measurement and flat band shift measurement suggest that the fluorine in the SiOF film will retard the cu diffusion.