Browsing by Author "Shew, Bor-Yuan"

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Characteristic Improvement of Inkjet Printed Ag Interconnects Using Tape On-Off and Mirror-Reaction Processes
(2015)
Guo, Zi-Li
;
Fu, Yu-Min
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Cheng, Yu-Ting
;
Shew, Bor-Yuan
;
Wu, Pu-Wei
In the paper, we develop and implement the processes of tape on-off and Ag mirror-reaction to the previously developed size scalable inkjet printing process technique, i.e. CPLoP (Combined Process of Lift-off and Printing) for continuing its future interconnect applications in flexible microelectronics. The newly developed processes not only reduce coffee ring effect but also improve better electrical conductivity of the printed Ag interconnects at low process temperature. A 10 mu m wide Ag interconnect with flat surface morphology and low electrical resistivity, i.e. 7.7 mu Omega center dot cm, has been realized.
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
(2013-03-01)
Tsui, Bing-Yue
;
Su, Ting-Ting
;
Shew, Bor-Yuan
;
Huang, Yang-Tung
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電子工程學系及電子研究所
Effect of surface preparation on the radiation hardness of MOS devices with high dielectric constant gate dielectric of HfO2 and metal gate of TiN is studied using extreme ultra-violet (EUV) light as the radiation source. Three kinds of surface treatment including HF-last, chemical-oxidation, and rapid-thermal-oxidation were evaluated. Among them, chemical-oxidation exhibits the best radiation hardiness in terms of interface traps and border traps. The state-of-the-art MOSFET with a thin high-k dielectric and a high quality chemical oxide interfacial layer shows that the degradation of subthreshold swing is more severe than degradation of threshold voltage. However, the overall degradation is less than 6% even after EUV irradiation to a total dose of 580 mJ/cm(2). Off-state current degradation is observed due to the generation of oxide traps and interface traps at the isolation region. This phenomenon does not occur In the conventional optical lithography process but should be considered if EUV lithography is used. (C) 2013 Elsevier Ltd. All rights reserved.
Investigation of Radiation Hardness of HfO2 Resistive Random Access Memory
(2014-01-01)
Tsui, Bing-Yue
;
Chang, Ko-Chin
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Shew, Bor-Yuan
;
Lee, Heng-Yuan
;
Tsai, Ming-Jinn
Radiation hardness of HfO2-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray as radiation source. The low-resistance state (LRS) is immune to irradiation, but temporary change of the high-resistance state (HRS) and endurance degradation could be observed at high total irradiation dose (TID). A physical model is proposed to explain these observations. It is concluded that the HfO2-based RRAM can be operated in high radiation environment, and EUV can be use to fabricate high-density RRAM array.
Micrograting fabricated by deep x-ray lithography for optical communications
(2007-04-01)
Ko, Cheng-Hao
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Shew, Bor-Yuan
;
Hsu, Shih-Che
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機械工程學系
;
Department of Mechanical Engineering
A concave micrograting designed for optical communication applications was fabricated by deep x-ray lithography (DXL). The micrograting has a height of 125 mu m, a grating pitch of 3 mu m, a total of 2584 lines, and a sidewall root-mean-square surface roughness of 5 nm. The designed operational wavelength range is from 1475 to 1625 nm. This micrograting is embedded inside a mirror-planar waveguide to form a spectrometer chip. The Rowland-circle grating mounting scheme is used for the spectral detection. The calculated diffraction efficiency of the third-order diffraction reaches 65% when Au is coated on the grating surface and the blaze angle is suitably chosen. The measured spectral width is 1.1 nm, which is in very good agreement with the calculated result of 0.9 nm. This chip-based grating device can be used as an ultracompact spectrometer or an ultracompact wavelength-division multiplexer in optical communications. Based on this work, our DXL technique can be further developed into an x-ray LIGA method for the mass production of such chip-based spectrometers. (C) 2007 Society of Photo-Optical Instrumentation Engineers.
Real-time investigation of the structural evolution of electrodes in a commercial lithium-ion battery containing a V-added LiFePO4 cathode using in-situ neutron powder diffraction
(2013-12-15)
Hu, Chih-Wei
;
Sharma, Neeraj
;
Chiang, Ching-Yu
;
Su, Hui-Chia
;
Peterson, Vanessa K.
In-situ neutron powder diffraction was employed to investigate the structural evolution of the electrode materials in a commercial lithium-ion battery used for electric buses in Taiwan. The battery, containing a vanadium-added LiFePO4 cathode, does not exhibit a delayed phase transition between LiFePO4 (triphylite) and FePO4 (heterosite) suggesting that the delayed phase transition can be suppressed through the use of vanadium-added LiFePO4 cathodes, which also enhances the capacity and prolongs the cycle life of these batteries. Furthermore, we characterize the readily reversible structural change of the anode (LixC6 where 0 < x <= 1) and correlate this to battery voltage. (C) 2013 Elsevier B.V. All rights reserved.
Transfer of a continuous-relief lenticular array onto a quartz substrate by using SIL combined with the dry-etching method
(2013-03-01)
Deng, Qing-Long
;
Chen, Chien-Yue
;
Lin, Wei-Li
;
Shew, Bor-Yuan
;
Chiang, Donyau
This study presents the technological process for producing a lenticular array on quartz. With scanning immersion lithography used to define the 3D lenticular array structure on a quartz substrate, inductively coupled plasma-reactive ion etching (ICP-RIE) is able to directly etch the structure. Based on the surface measurement, ICP-RIE can completely etch the surface structure onto the quartz substrate, and the surface roughness can reach 30 nm. Furthermore, after the optical measurement of stereoscopic images, the left and the right stereoscopic images can be successfully transmitted to the corresponding places without crosstalk and with a splitting efficiency close to 80%. As a result, this technology allows for the production of a lenticular structure with various changes on the quartz surface.
Vanadium Substitution of LiFePO4 Cathode Materials To Enhance the Capacity of LiFePO4-Based Lithium-Ion Batteries
(2012-11-22)
Chiang, Ching-Yu
;
Su, Hui-Chia
;
Wu, Pin-Jiun
;
Liu, Heng-Jui
;
Hu, Chih-Wei
The mechanism of enhancing the capacity of the LiFePO4 cathodes in lithium ion batteries by the addition of a small amount of vanadium, which locate on the lithium site and induce lithium vacancies in the crystal structure, is reported in this article. As a result, the capacity increases from 138 mAh/g found for pristine LiFePO4 to 155 mAh/g for the V-added compound, and the conductivity increases from 4.75 x 10(-4) S/cm for the LiFePO4 without V addition to 1.9 x 10(-2) S/cm for the V-added compound. A possible model to facilitate the enhancement of conductivity and capacity is described with evidence supported by X-ray powder diffraction, X-ray absorption spectroscopy, and neutron powder diffraction data.