Browsing by Author "Shi, JW"

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Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
(2006-06-12)
Liao, YS
;
Shi, JW
;
Wu, YS
;
Kuo, HC
;
Feng, M
We demonstrate the optical heterodyne diagnostics and high saturation power characteristics of a novel undoped InP sandwiched In0.53Ga0.47As p-i-n photodiode with a partially p-doped photoabsorption layer, which is grown on a linearly graded metamorphic InxGa1-xP buffered GaAs substrate layer and exhibits an excellent low dark current density of 3.6 x 10(-7) A/cm(2). Such a top-illuminated optical receiver exhibits an illuminating window of 60-mu m diameter, which performs ultra-linear power handling capability up to 18 dBm at 1550 nm, providing a maximum photocurrent of 35 mA under a reverse bias of 9 volts. These result in extremely high current bandwidth and bandwidth-responsivity products of 350 mA center dot GHz and 4.8 GHz center dot A/W, respectively, at receiving frequency of up to 10 GHz. (c) 2006 Optical Society of America.
Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance
(2005-08-01)
Shi, JW
;
Hsu, HC
;
Huang, FH
;
Liu, WS
;
Chyi, JI
We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (similar to 1 ps) materials, under high dc bias voltages.