Browsing by Author "Shi, Wang-Cheng"

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Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
(2016-07)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Chu, Chung-Ming
;
Chuang, Yu-Lin
;
Huang, Yu-Xiang
In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400A degrees C. Thus, the Ti/Al/W ohmic and WN (X) Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.
GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
(2015-12-01)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Li, Fang-Ming
;
Shi, Wang-Cheng
;
Huang, Yu-Xiang
A GaN high-electron-mobility transistor (HEMT) with WN (x) /Cu gate for high-power applications has been investigated. The direct-current (DC) characteristics of the device are comparable to those of conventional Ni/Au-gated GaN HEMTs. The results of high-voltage stress testing indicate that the device is stable after application of 200 V stress for 42 h. The WN (x) /Cu-gated GaN HEMT exhibited no obvious changes in the DC characteristics or Schottky barrier height before and after annealing at 250A degrees C for 1 h. These results demonstrate that the WN (x) /Cu gate structure can be used in a GaN HEMT for high-power applications with good thermal stability.