Browsing by Author "Shie, B. S."

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Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing
(2010-11-01)
Chen, W. B.
;
Wu, C. H.
;
Shie, B. S.
;
Chin, Albert
;
電子工程學系及電子研究所
To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward everse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness.
Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing
(2010-11-01)
Chen, W. B.
;
Wu, C. H.
;
Shie, B. S.
;
Chin, Albert
;
電子工程學系及電子研究所
To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward\reverse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness.
Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing
(2011-04-01)
Chen, W. B.
;
Shie, B. S.
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
By applying laser annealing (LA) on both gate dielectrics and source/drain activation, the TaN/ZrO(2)/La(2)O(3)/SiO(2) on Ge n-MOSFETs shows a high gate capacitance density, a small n(+)/p-junction ideality factor of 1.10, a small subthreshold swing (SS) of 106 mV/dec, and a good high-field mobility of 285 or 340 cm(2)/V . s after gate leakage correction at 1 MV/cm, at a small 0.95-nm equivalent oxide thickness (EOT). To the best of our knowledge, this is the first demonstration of significantly high gate capacitance in MOSFETs by LA. This is also the highest 1-MV/cm mobility at the smallest EOT of Ge n-MOSFETs and better than the SiO(2)/Si universal mobility.
Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing
(2010)
Chen, W. B.
;
Shie, B. S.
;
Chin, Albert
;
Hsu, K. C.
;
Chi, C. C.
High performance metal-gate/high-kappa/Ge n-MOSFETs are reached with low 73 Omega/sq sheet resistance (R(s)), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm(2)/Vs high-field (1 MV/cm) mobility and low 37 mV Delta V(t) PBTI (85 degrees C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n(+)/p junction and 10X better I(ON)/I(OFF).