Browsing by Author "Shie, DC"

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Characterization of temperature dependence for HfO2 gate dielectrics treated in NH3 plasma
(2003-10-01)
Wang, JC
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Shie, DC
;
Lei, TF
;
Lee, CL
;
電子工程學系及電子研究所
For the first time, the characteristics and temperature dependence of electrical properties for ultrathin HfO2 gate dielectrics treated in NH3 plasma after deposition were investigated. After this treatment, significant nitrogen incorporation at the HfO2/silicon interface (interfacial layer) was examined by Auger electron spectroscopy. Moreover, the formation of Hf-N bonding and the suppression of Hf-Si bonding were observed from electron spectroscopy for chemical analysis spectra. The activation energy of charge trapping reflected in the current-voltage characteristics was effectively reduced, which led to improved hysteresis and its weaker temperature dependence in HfO2 gate dielectrics treated in NH3 plasma. (C) 2003 The Electrochemical Society.
Soft breakdown of hafnium oxynitride gate dielectrics
(2005-07-15)
Wang, JC
;
Shie, DC
;
Lei, TF
;
Lee, CL
;
電子工程學系及電子研究所
A detailed study of soft breakdown modes for hafnium oxynitride (HfON) gate dielectrics under stress is investigated. Two types of soft breakdown, digital and analog modes, are observed in HfON gate dielectrics, featuring gate voltage fluctuation accompanying random telegraph noise and nonswitching 1/f noise, respectively. The dependence of gate area, oxide thickness, and stress current density on breakdown modes is also studied. Thin oxide thickness and small gate area contribute to the enhancement of charge to breakdown (Q(bd)). Large Joule heat damage generated under stress inducing the analog soft breakdown for thick hafnium oxynitride films is proposed to clearly understand the breakdown of HfON gate dielectrics. (c) 2005 American Institute of Physics.
Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics
(2004-03-01)
Wang, JC
;
Shie, DC
;
Lei, TF
;
Lee, CL
;
電子工程學系及電子研究所
The capacitance-voltage (C-V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors with different sweep voltage were investigated. It was found that, for the p-type substrate MOS capacitor, the C-V hysterisis has a turnaround characteristic as the applied voltage exceeds -3.0 V. The phenomenon is explained by electron trappings at the low electric field and hole trappings, which resulted from the impact ionization, at the high electric field in the dielectrics. (C) 2004 American Institute of Physics.