Browsing by Author "Shie, Tin-En"

Now showing 1 - 3 of 3

Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
(2010)
Chang, Chia-Hua
;
Shie, Tin-En
;
Lin, Yueh-Chin
;
Kakushima, K.
;
Iwai, H.
Post deposition annealing is a critical process for the quality improvement of gate oxides on III-V MOS capacitors. Though high temperature annealing would effectively repair defects, it could also induce undesired electrical characteristics due to the crystallization of the gate oxide. In this work, we investigate the novel two steps annealing technique to improve the HfO2/In0.7Ga0.3As MOSCAP properties. The two steps process takes advantage of 1st high temperature annealing (550 degrees C) to improve the interface quality and 2nd low temperature annealing (450 degrees C) for curing bulk oxide without oxide crystallization. The two steps annealing technique greatly improves the HfO2/In0.7Ga0.3As properties as compared to single step process and is expected to be helpful for future III-V MOSFET development.
Study of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitor
(2011)
Lin, Yueh-Chin
;
Chang, Chia-Hua
;
Kakushima, Kuniyuki
;
Iwai, Hiroshi
;
Shie, Tin-En
In this study, we investigate the composite La2O3/HfO2 high k dielectric as the gate oxide for n-InAs metal-oxide semiconductor (MOS) capacitor. The La2O3 was used for its high k value and HfO2 was used as the diffusion barrier and was deposited between La2O3 and InGaAs to prevent the Inter-diffusion between InAs and La(2)OZ(3) layers after post deposition annealing (PDA). Finally, we demonstrate the La2O3/HfO2 composite oxide structure as the high K dielectric for n-InAs MOS capacitor with enhanced capacitance for the MOS capacitor.
Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs
(2011-03-01)
Lin, Y. C.
;
Shie, Sheng-Li
;
Shie, Tin-En
;
Wong, Yuen-Yee
;
Chen, K. S.
This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250 degrees C for 20 min, Cu(3)Ge and Pd(12)Ga(5)As(2) compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 x 10(-6) Omega cm(2). Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250 degrees C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer.