Browsing by Author "Shieh, Li-Jung"
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Item type:Item, CMOS-MEMS Based Optical Electrostatic Phase Shifter Array With Low Driving Voltage and High Fill Factor(2010-09-01) ;Chiou, Jin-Chern ;Hung, Chen-Chun ;Shieh, Li-Jung ;電機工程學系電控工程研究所This work develops a novel 4 x 4 optical phase shifting micromirror array that achieves a lambda/4 vertical displacement and makes the mirror peak-to-valley deformation within lambda/10 (514 nm light source). Each individual micromirror pixel is controllable and driven by an electrostatic parallel plate actuator. The mirror reflective surface is an aluminum layer with a high optical reflectivity exceeding 90%. This device achieves a high fill factor of more than 90% without an additional flip-chip bonding process due to the parallel plate actuator and the hidden suspension beam structures. The phase shifter array is fabricated using the Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mu m 2p4m CMOS process and post-CMOS process. An in-house post-process is utilized to reserve a 40 mu m thick bulk-silicon under the 200 mu m x 200 mu m mirror. This eliminates mirror deformation from residual stress after the device is released. The micromirror demonstrates a vertical displacement of lambda/4 at only 3 V and the resonant frequency is 3.6 kHz. Industry can use this phase-shifting micromirror array as a spatial light modulator in holographic data storage systems in the future.Item type:Item, CMOS-MEMS prestress vertical cantilever resonator with electrostatic driving and piezoresistive sensing(2008-10-21) ;Chiou, Jin-Chern ;Shieh, Li-Jung ;Lin, Yung-Jiun ;電控工程研究所Institute of Electrical and Control EngineeringThis paper presents a CMOS-MEMS prestress vertical comb-drive resonator with a piezoresistive sensor to detect its static and dynamic response. The proposed resonator consists of a set of comb fingers fabricated along with a composite beam. One end of the composite beam is clamped to the anchor, while the other is elevated by residual stress. Actuation occurs when the electrostatic force, induced by the fringe effect, pulls the composite beam downwards to the substrate. The initial tip height at the free end of the resonator due to residual stress is approximately 60 mu m. A piezoresistor is designed to sense the vertical deflection and vibration of the resonator. The relative change in the resistance of the piezoresistor (Delta R/R) is about 0.52% when a voltage of 100V is applied in static mode. The first resonant frequency of the device is 14.5 kHz, and the quality factor is around 36 in air. The device is fabricated through TSMC 0.35 mu m 2p4m CMOS process and post-CMOS process.Item type:Item, Complementary Metal-Oxide-Semiconductor Micro-Electro-Mechanical-System Reconfigurable Cantilever Resonator with Multiple Electrostatic Electrodes(2010-11-01) ;Shieh, Li-Jung ;Chiou, Jin-Chern ;電子工程學系及電子研究所 ;電控工程研究所Department of Electronics Engineering and Institute of ElectronicsIn this paper we present a prestress vertical comb drive resonator with a frequency tuning capability The resonator consists of three sets of comb fingers which act-as driving electrodes The comb fingers are fabricated along with a composite beam One end of the composite beam is clamped to the anchor whereas the other end is elevated vertically by the residual stress A clamped force which is formed by a DC voltage is utilized to restrain the vibration of the composite beam By applying a DC clamped voltage and a driving voltage in different electrodes the resonator exhibits different frequency responses The device is fabricated through a 0 35 mu m complementary metal-oxide-semiconductor (CMOS) process with a post CMOS micromachining process Experimental results indicate that the initial resonant frequency of The device is 18 6 kHz and the maximum frequency tuning range up to 28 5% is obtained The resonator device can recover its original frequency without causing any structural damage (C) 2010 The Japan Society of Applied PhysicsItem type:Item, Complementary Metal-Oxide-Semiconductor Micro-Electro-Mechanical-System Reconfigurable Cantilever Resonator with Multiple Electrostatic Electrodes(2010-11-01) ;Shieh, Li-Jung ;Chiou, Jin-Chern ;電機工程學系 ;電控工程研究所Department of Electrical and Computer EngineeringIn this paper we present a prestress vertical comb drive resonator with a frequency tuning capability The resonator consists of three sets of comb fingers which act-as driving electrodes The comb fingers are fabricated along with a composite beam One end of the composite beam is clamped to the anchor whereas the other end is elevated vertically by the residual stress A clamped force which is formed by a DC voltage is utilized to restrain the vibration of the composite beam By applying a DC clamped voltage and a driving voltage in different electrodes the resonator exhibits different frequency responses The device is fabricated through a 0 35 mu m complementary metal-oxide-semiconductor (CMOS) process with a post CMOS micromachining process Experimental results indicate that the initial resonant frequency of The device is 18 6 kHz and the maximum frequency tuning range up to 28 5% is obtained The resonator device can recover its original frequency without causing any structural damage (C) 2010 The Japan Society of Applied PhysicsItem type:Item, Novel electrostatic MOEMS phase shifter array using CMOS-MEMS process(2010-01-01) ;Chiou, Jin-Chern ;Hung, Chen-Chun ;Shieh, Li-Jung ;Tsai, Zhao-Long電控工程研究所We present a 3 x 3 micro-optoelectromechanical systems (MOEMS) phase shifter array that achieves a lambda/4 vertical displacement with peak-to-valley deformation within lambda/10 (514-nm light source). The mirror reflective surface is made of an aluminum layer with a high optical reflectivity exceeding 90%. Each individual micromirror pixel is controlled and driven by comb drive actuators. The phase shifter array is fabricated using the Taiwan Semiconductor Manufacturing Company 0.35-mu m 2P4M complementary metal-oxide semiconductor process. In-house post-processing is utilized to reserve a 40-mu m-thick bulk-silicon under the 200 mu m x 200 mu m mirror. This eliminates mirror deformation from residual stress after the device is released. The micromirror demonstrates a vertical displacement of lambda/4 at 38 V. The device resonant frequency is 3.71 kHz, and the fill factor is 0.65. This MOEMS phase shifter array can be used as a spatial light modulator in holographic data storage systems. (C) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3280264]Item type:Item, Wireless powering electronics and spiral coils for implant microsystem toward nanomedicine diagnosis and therapy in free-behavior animal(2012-11-01) ;Chang, Chih-Wei ;Hou, Kuan-Chou ;Shieh, Li-Jung ;Hung, Sheng-HsinChiou, Jin-ChernIn this paper, we present a wireless RF-powering electronics system approach for batteryless implantable biomedical microsystem with versatile sensors/actuators on laboratory animals toward diagnosis and therapy applications. Miniaturized spiral coils as a wireless power module with low-dropout (LDO) linear regulator circuit convert RF signal into DC voltage, provide a batteryless implantation for truly free-behavior monitoring without wire dragging. Presented design achieves low quiescent-current and Line/Load Regulation, high antenna/current efficiency with safety considerations including temperature and electromagnetic absorption issues to avoid damage to the implanted target volume of tissue. Related system performance measurements have been successfully completed to demonstrate the wireless powering capabilities in desired implantable microsystems. (c) 2012 Elsevier Ltd. All rights reserved.