Browsing by Author "Shih, Chen Wei"

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Remarkably high mobility ultrathin-film metal-oxide transistor with strongly overlapped orbitals
(2016-01-08)
Shih, Chen Wei
;
Chin, Albert
;
Lu, Chun Fu
;
Su, Wei Fang
;
電子工程學系及電子研究所
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I-ON/I-OFF of 2.3 x 10(7), small 110 mV/dec sub-threshold slope, and a low V-D of 2.5V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.