Browsing by Author "Shih, Horng-Yuan"

Now showing 1 - 7 of 7

A 1.2V Interference-Sturdiness, DC-Offset Calibrated CMOS Receiver Utilizing a Current-Mode Filter for UWB
(2008)
Shih, Horng-Yuan
;
Chen, Wei-Hsien
;
Juang, Kai-Chenug
;
Yang, Tzu-Yi
;
Kuo, Chien-Nan
An interference-sturdiness receiver with a current-mode filter for 3-5GHz UWB applications is implemented in a 1.2V 0.13 mu m CMOS process. The chip provides a maximum voltage gain of 70dB and a dynamic range of 60dB. The measured in-band OIP3 is +9.39dBm, out-of-band IIP3 -15dBm and noise figure 6.8dB in the maximum gain mode. An algorithm for the automatic digital DC offset calibration is also demonstrated.
A 250 MHz 14 dB-NF 73 dB-Gain 82 dB-DR Analog Baseband Chain With Digital-Assisted DC-Offset Calibration for Ultra-Wideband
(2010-02-01)
Shih, Horng-Yuan
;
Kuo, Chien-Nan
;
Chen, Wei-Hsien
;
Yang, Tzu-Yi
;
Juang, Kai-Chenug
A 250 MHz analog baseband chain for Ultra-Wideband was implemented in a 1.2 V 0.13 mu m CMOS process. The chip has an active area of 0.8 mm(2). In the analog baseband, PGAs and filters are carried out by current-mode amplifiers to achieve wide bandwidth and wide dynamic range of gain, as well as low noise and high linearity. Besides, a current-mode Sallen-Key low-pass filter is adopted for effective rejection of out-of-band interferers. A 6th-order Chebyshev low-pass filter realized in G(m)-C topology is designed in the baseband chain for channel selection. Digitally-assisted DC-offset calibration improves second-order distortion of the entire chain. The design achieves a maximum gain of 73 dB and a dynamic range of 82 dB. Measured noise figure is 14 dB, an IIP3 of -6 dBV, and IIP2 of -5 dBV at the maximum gain mode. The analog baseband chain consumes 56.4 mA under supply of 1.2 V.
A charge accumulation-free voltage-controlled functional electrical stimulator with bi-phasic sinusoidal stimulation
(2019-11-01)
Chen, Wei-Hsien
;
Chang, Chia-Hung
;
Shih, Horng-Yuan
;
Chiu, Tzai-Wen
;
Kuo, Chien-Nan
This paper presents a charge accumulation-free voltage-controlled (VC) bi-phasic sinusoidal functional electrical stimulator (FES) for bioelectronic application. Traditionally, constant current (CC) pulse-shaped FESs with active or passive charge balancers are used to compensate for accumulated charges arise from process, voltage and temperature (PVT) variation as a result of long-term stimulation. Unlike the CC pulse-shaped FES, the VC sinusoidal-shaped FES is adopted here to avoid charge accumulation over time. The charge balancer is not required, substantially reducing system complexity and the chip area of the FES. To demonstrate the feasibility of concept, in this paper, four channels of VC bi-phasic sinusoidal-shaped FESs are integrated with the bio-potential recording circuit to compare with four channels of CC bi-phasic pulse-shaped FESs that are integrated with the same neural recording system for comparison. Measurements indicate an absence of charge accumulation as a result of the VC FESs. In addition, here we adopt the sinusoidal stimulation to reduce transient effects on tissue in comparison to a pulse-shaped method. The bio-potential activities of a cockroach leg that is stimulated for 50 s by the proposed bi-phasic sinusoidal stimulation are recorded. The measured bio-potential activities of a cockroach leg show that no stimulation-evoked leg movement occurs under stimulation by the sinusoidal waveform.
A Q-band Direct Divide-by-4 Injection-Locked Frequency Divider with Quadrature Outputs
(2010-01-01)
Yan, Tzu-Chao
;
Shih, Horng-Yuan
;
Yang, Tzu-Yi
;
Kuo, Chien-Nan
;
交大名義發表
A divide-by-4 injection-locked frequency divider is designed for applications in the millimeter-wave frequency range. The proposed circuit also features in quadrature phase outputs by using a quadrature voltage-controlled oscillator. The input signal is injected into the common-mode node at the tail current source directly. Implemented in a 0.13 mu m CMOS technology, the core circuit consumes dc power of 3.66mW with 1.2 V supply voltage. The operation range achieves 1.95 GHz. The entire die occupies an area of 974x726 um(2).
A Ultra-Low Power Channel Selection filter For Low-IF FSK Biomedical Receivers
(2012)
Shih, Horng-Yuan
;
Chen, Wei-Hsien
;
Juang, Kai-Chenug
;
Chen, Chun-Fan
;
Lin, Sheng-Kai
Ultra-low power (ULP) receivers can be applied in wearable and implantable biomedical sensors. In this paper, a ULP band-pass filter designed as a channel selection filter for low-IF FSK biomedical receivers is implemented in 1.8 V 0.18 mu m CMOS process. Under power consumption of 200 mu W, the measured central frequency and bandwidth is 1.5 MHz and 330 kHz, respectively. As applied in a low-IF FSK biomedical receiver, data rate of 330 kb/s can be achieved.
COHERENT TUNABLE FILTER APPARATUS AND WIRELESS COMMUNICATION FRONT-END CIRCUIT THEREOF
(2009-07-02)
Kuo, Chien-Nan
;
Shih, Horng-Yuan
;
Pang, Yi-Hsin
A front-end circuit with coherent tunable filters is provided. The circuit includes a first filter, an amplifier, and a second filter. The amplifier is coupled to the first filter, and the second filter is coupled to the amplifier. Furthermore, the amplifier is placed between the first and second filters. The first filter has a first tunable intermediate frequency, and is used to filter a received signal. The amplifier is used to amplify the output of the first filter. The second filter has a second tunable intermediate frequency, and is used to filter the output of the amplifier. The first and second intermediate frequencies have a coherent-tuning relation with each other.
Differential LC Ladder LNA with Proposed third-Order Active Notch Filter for UWB Band Group1
(2009)
Tsou, Yu-Lin
;
Shih, Horng-Yuan
;
Kuo, Chien-Nan
;
Chang, Chia-Hung
;
電子工程學系及電子研究所
A proposed third-order active notch filter was developed for a LC ladder Low Noise Amplifier (LNA) applied for UWB band group1 in standard 0.13 mu m CMOS technology. The notch filter eliminated interfering signal at 5.85 GHz and improved third-order input intercept point (IIP3) by 4.7 dB under interferences of 802.11a test. The measured maximum power gain was 15.87 dB at 4488MHz, minimum NF was 3.19 dB at 3960MHz that performs FOM of 1.3 (/mW) and measured P1dB was -16.82 dBm at 4488 MHz.