Browsing by Author "Shih, W. C."

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Optimization of gate insulator material for GaN MIS-HEMT
(2016)
Lin, Y. C.
;
Lin, T. W.
;
Wu, C. H.
;
Yao, J. N.
;
Hsu, H. T.
Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.