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Browsing by Author "Shih, Wang-Cheng"

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    An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure
    (2015)
    Yao, Jing-Neng
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    Lin, Yueh-Chin
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    Chuang, Yu-Lin
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    Huang, Yu-Xiang
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    Shih, Wang-Cheng
    We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.
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    Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
    (2016-04)
    Hsu, Ching-Hsiang
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    Shih, Wang-Cheng
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    Lin, Yueh-Chin
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    Hsu, Heng-Tung
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    Hsu, Hisang-Hua
    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated. (C) 2016 The Japan Society of Applied Physics
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    Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
    (2016-04-01)
    Hsu, Ching-Hsiang
    ;
    Shih, Wang-Cheng
    ;
    Lin, Yueh-Chin
    ;
    Hsu, Heng-Tung
    ;
    Hsu, Hisang-Hua
    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated. (C) 2016 The Japan Society of Applied Physics