Browsing by Author "Shih, Yang-Ta"

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Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells
(2015-03-02)
Chang, Chiao-Yun
;
Li, Heng
;
Shih, Yang-Ta
;
Lu, Tien-Chang
;
光電工程學系
We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase the carrier capturing capability of TDs. An optimized V-pit size of approximately 200-250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%. (C) 2015 AIP Publishing LLC.