Browsing by Author "Shiung, ZW"

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Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxides
(2001)
Wu, ZC
;
Shiung, ZW
;
Chiang, CC
;
Wu, WH
;
Chen, MC
This work makes a comparative study of physical and electrical properties between two species of inorganic low-K CVD oxides, namely F-doped FSG (fluorinated silicate glass, K=3.5) and C-doped OSG (organosilicate glass, K=2.9). It is found that FSG has a higher thermal stability (>600degreesC) than OSG (500degreesC) based on the results of 30 min thermal anneal in N-2 ambient. The degradation of the low-K property in OSG is predominately due to the thermal decomposition of methyl (CH3) groups at temperatures above 500degreesC, which are incorporated to reduce the density and polarizability of OSG. For the Cu-gated oxide-sandwiched low-K dielectric MIS capacitors, Cu permeation was observed in both FSG and OSG after the MIS capacitors were subjected to bias-temperature stressing (BTS) at 250 and 150degreesC, respectively, with an effective applied field of 0.8 MV/cm. It appeared that Cu drifted more readily in OSG than in FSG presumably because OSG has a more porous and less dense structure than FSG. The Cu penetration can be efficiently mitigated by a thin nitride dielectric barrier layer.
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
(2001-06-01)
Wu, ZC
;
Shiung, ZW
;
Wu, RG
;
Liu, YL
;
Wu, WH
This work investigates the dielectric and barrier properties of two species of organic aromatic low dielectric constant (low-k) polymers, namely, FLARE and SiLK. Experimental results indicate that both of the low-k polymers exhibit acceptable thermal stability with respect to a thermal annealing at 400 degreesC for 8 h in an N-2 ambient. Moreover, they show a good dielectric barrier property against Cu penetration under bias-temperature stressing (BTS) at 150 degreesC with an applied effective field of 0.8 MV/cm. Nevertheless, an anomalous instability of the capacitance-voltage curve was observed for the first time under BTS. This finding is explained by the proposed model of stress induced dielectric polarization charges within these organic aromatic polymers. The polarization instability may seriously degrade the long term reliability of circuit operations. (C) 2001 The Electrochemical Society.
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
(2000)
Wu, ZC
;
Shiung, ZW
;
Wang, CC
;
Fang, KL
;
Wu, RG
Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 similar to 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.
Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
(2001-06-01)
Wu, ZC
;
Shiung, ZW
;
Chiang, CC
;
Wu, WH
;
Chen, MC
This work compares the physical and electrical properties of two species of inorganic low dielectric constant (low-k) chemical vapor deposited (CVD) oxides, F-doped fluorinated silicate glass (FSG, k = 3.5) and C-doped organosilicate glass (OSG, k = 2.9). Experimental results indicate that FSG has a higher thermal stability >600 degreesC! than OSG (500 degreesC), based on the results of thermal annealing for 30 min in an N-2 ambient. The degradation of the low-k property in OSG is mainly due to the thermal decomposition of methyl (-CH3) groups at temperatures above 500 degreesC. For the Cu gated oxide-sandwiched low-k dielectric metal-insulator-semiconductor (MIS) capacitors, Cu penetration was observed in both FSG and OSG after the MIS capacitors were bias-temperature stressed at 250 and 150 degreesC, respectively, with an effective applied field of 0.8 MV/cm. Specifically, Cu appeared to drift more readily in OSG than in FSG, presumably because OSG has a more porous and less dense structure than FSG. The Cu permeation can be impeded by a thin nitride (SiN) barrier layer. (C) 2001 The Electrochemical Society.
Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
(2001-06-01)
Wu, ZC
;
Shiung, ZW
;
Chiang, CC
;
Wu, WH
;
Chen, MC
This work investigates the physical and electrical properties of two species of inorganic C-doped low dielectric constant (low-k) chemical vapor deposited (CVD) organosilicate glasses (OSGs, alpha -SiCO:H). They are both deposited by plasma-enhanced CVD (PECVD) processes using methylsilane [(CH3)SiH3, 1 MS]- and trimethylsilane [(CH3)(3)SiH, 3 MS]-based gases as the reagents, and are designated as OSG1 and OSG2, respectively. Experimental results indicate that the thermal stability temperature of OSG1 is 500 degreesC, while that of OSG2 is 600 degreesC, based on the results of thermal annealing for 30 min in an N-2 ambient. The deterioration of the low-k property in OSG1 is predominately due to the thermal decomposition at temperatures above 500 degreesC of methyl (-CH3) groups, which are introduced to lower the density and polarizability of OSGs. For the Cu-gated oxide-sandwiched low-k dielectric metal-insulator-semiconductor (MIS) capacitors, Cu permeation was observed in both OSG1 and OSG2 after the MIS capacitors were bias-temperature stressed at 150 degreesC with an effective applied field of 0.8 MV/cm. Moreover, Cu appeared to drift more readily in OSG1 than in OSG2, presumably because OSG1 has a more porous and less cross-linked structure than OSG2. The Cu penetration can be mitigated by a thin nitride dielectric barrier. (C) 2001 The Electrochemical Society.