Browsing by Author "Simanjuntak, F. M."

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One bipolar transistor selector - One resistive random access memory device for cross bar memory array
(2017-09-01)
Aluguri, R.
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Kumar, D.
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Simanjuntak, F. M.
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Tseng, T. Y.
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電子工程學系及電子研究所
Abipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 10(4) with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 10(5) sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application. (C) 2017 Author(s).
Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
(2019-01-01)
Simanjuntak, F. M.
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Chandrasekaran, S.
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Gapsari, F.
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Tseng, T. Y.
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材料科學與工程學系
This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.
Temperature induced complementary switching in titanium oxide resistive random access memory
(2016-07-01)
Panda, D.
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Simanjuntak, F. M.
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Tseng, T. -Y.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400 degrees C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 mu A. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).