Browsing by Author "Sproule, GI"

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Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)
(2002-05-01)
Chen, HW
;
Landheer, D
;
Wu, X
;
Moisa, S
;
Sproule, GI
The properties of ZrO2 films deposited using molecular oxygen and a recently developed precursor, zirconium Zr(O-i-Pr)(2)(thd)(2) have been investigated. The organometallic was dissolved as a 0.15 molar solution in octane and introduced into the deposition chamber using a liquid injection system. The deposition rate was insensitive to molecular oxygen flow but changed with liquid injection rate and was thermally activated in the range 390 degreesC-550 degreesC. Carbon concentrations, <0.1 at.%, the detection limit of the x-ray photoelectron spectroscopy depth profiling measurements, were obtained at the lowest deposition temperatures and deposition rates. High-resolution transmission electron microscopy showed the films to be polycrystalline as deposited, with a zirconium silicate interfacial layer. After proper annealing treatments, an equivalent oxide thickness (EOT) of around 2.3 urn has been achieved for a 5.2 nm thick film, with a leakage current two orders of magnitude lower than that Of SiO2 with the same EOT. Promising capacitance-voltage characteristics were also achieved, but some improvements are required if these films are to be used as a gate insulator. (C) 2002 American Vacuum Society.
Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)
(2002-06-01)
Chen, HW
;
Huang, TY
;
Landheer, D
;
Wu, X
;
Moisa, S
The characteristics of ultrathin ZrO(2) films deposited using molecular oxygen and the zirconium precursor Zr(O(i)-Pr)(2)(thd)(2) [where O(i)-Pr is isopropoxide and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate] were investigated. The organometallic was dissolved as a 0.15 M solution in octane and introduced into the deposition chamber using a liquid injection system. The deposition rate was insensitive to molecular oxygen flow but changed with liquid injection rate and was thermally activated in the range 390-550degreesC. No evidence of Zr-C and Zr-Si bonds were found in the X-ray photoelectron spectroscopy (XPS), spectra, and carbon concentrations, 0.1 atom %, the detection limit of the XPS depth profiling measurements, were obtained at the lowest deposition temperatures and deposition rates. High-resolution transmission electron microscopy showed the ZrO(2) films to be polycrystalline as deposited, with an amorphous zirconium silicate interfacial layer. The effects of postdeposition annealing were also demonstrated. After proper annealing treatments, promising capacitance-voltage and current-voltage characteristics were achieved. A film with an equivalent oxide thickness of 2.3 nm showed current reductions of approximately two orders of magnitude when compared to SiO(2), but some improvements are required if these films are to be used as a gate-insulator beyond the 100 nm CMOS (complementary metal oxide semiconductor) technology node. (C) 2002 The Electrochemical Society.
Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2) and O-2
(2002-06-01)
Chen, HW
;
Huang, TY
;
Landheer, D
;
Wu, X
;
Moisa, S
The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precursor Zr(O-i-Pr)(2)(thd)(2) [where O-i-Pr is isopropoxide and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate] were investigated. The organometallic was dissolved as a 0.15 M solution in octane and introduced into the deposition chamber using a liquid injection system. The deposition rate was insensitive to molecular oxygen flow but changed with liquid injection rate and was thermally activated in the range 390-550degreesC. No evidence of Zr-C and Zr-Si bonds were found in the X-ray photoelectron spectroscopy (XPS), spectra, and carbon concentrations, 0.1 atom %, the detection limit of the XPS depth profiling measurements, were obtained at the lowest deposition temperatures and deposition rates. High-resolution transmission electron microscopy showed the ZrO2 films to be polycrystalline as deposited, with an amorphous zirconium silicate interfacial layer. The effects of postdeposition annealing were also demonstrated. After proper annealing treatments, promising capacitance-voltage and current-voltage characteristics were achieved. A film with an equivalent oxide thickness of 2.3 nm showed current reductions of approximately two orders of magnitude when compared to SiO2, but some improvements are required if these films are to be used as a gate-insulator beyond the 100 nm CMOS (complementary metal oxide semiconductor) technology node. (C) 2002 The Electrochemical Society.
Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxide
(2003-07-01)
Chen, HW
;
Huang, TY
;
Landheer, D
;
Wu, X
;
Moisa, S
Ultrathin Zr silicate films were deposited using Zr(Oi-Pr)(2)(tetramethylheptanedione,thd)(2), Si(O(t)-Bu)(2)(thd)(2) and nitric oxide in a pulse-mode metallorganic chemical-vapor deposition apparatus with a liquid injection source. High resolution transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and medium energy ion scattering were employed to investigate the structure, surface roughness, chemical state, and composition of the films. The nitric oxide used as oxidizing gas, instead of O(2), not only reduced the thickness of the interfacial layer but also removed the carbon contamination effectively from the bulk of the films. The as-deposited Zr silicate films with a Si: Zr ratio of 1.3:1 were amorphous, with an amorphous interfacial layer 0.3-0.6 nm thick. After a spike anneal in oxygen and a 60 s nitrogen anneal at 850degreesC, these films remained amorphous throughout without phase separation, but the interfacial layer increased in thickness. No evidence of Zr-C and Zr-Si bonds were found in the films by XPS and carbon concentrations <0.1 atom %, the detection limit, were obtained. The hysteresis, fixed charge density, and leakage current determined from capacitance-voltage analysis improved significantly after postdeposition anneals at 850 degrees C and the films exhibited promising characteristics for deep submicrometer metal-oxide-semiconductor devices. (C) 2003 The Electrochemical Society.