Browsing by Author "Su, CJ"

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A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel
(2005-09-01)
Lin, HC
;
Lee, MH
;
Su, CJ
;
Huang, TY
;
Lee, CC
A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.
High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
(2006-07-01)
Su, CJ
;
Lin, HC
;
Huang, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility.
Magneto-optic imaging of proton-irradiated high T-c superconducting thin films: A revisit of J(c)(T) functional and flux pinning enhancement
(2001-10-10)
Wang, C
;
Seo, HW
;
Su, CJ
;
Wang, YH
;
Chen, QY
We have performed systematic quantitative measurements of the critical current density J(c)(B,T) for YBCO thin films proton-irradiated to various dosages using the MOI technique. Results for external magnetic fields up to 400Oe and temperature ranging from 5 to 80 K are T resented for a 600 nm thick YBCO film irradiated by proton up to a dosage of 10(16) cm(-2) at 500 keV. While no significant differences were observed for T > 50K, the J(c) values consistently increased with the increasing external field for T < 50 K.