Browsing by Author "Su, Chin-I"

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A 3.2 mW MIXED-SIGNAL READOUT CIRCUIT FOR AN ORGANIC VERTICAL NANO-JUNCTIONS SENSOR
(2016)
Chao, Paul C. -P.
;
Su, Chin-I
;
Tran, Trong-Hieu
;
Zan, Hsiao-Wen
;
電子工程學系及電子研究所
A new sensitivity organic vertical nano-junctions (VNJ) sensor for ammonia detection and its readout system are presented in this study. The designed ammonia sensor, VNJ-P3HT diode, is a simple structure with real-time response, high reproducibility and low-cost sensor. Along with the designed sensor, a precision and robust readout circuit is designed and successfully implemented as the proposed chip in this study. To utilize for a novel organic bio-chip, a particular readout system is presented that can acquire signal, compute and display concentration values of ammonia without using microcontroller. The chip is fabricated by the TSMC 0.18-mu m 1P6M 3.3V mixed signal CMOS process technique for verification. Experiment results show that the average resolution is 70.48mV/log(ppm) in a short transient time response, 50 seconds, as compared to prior study, 200 seconds. Error rate, average noise and detection rate reliability are 2.86%, 123 mu Vrms, and 99.6%, respectively. This chip could be suitable for application in cars, cell phones, watches, etc.
A Fast Readout Circuit for an Organic Vertical Nano Junction Sensor
(2016-01-01)
Trong-Hieu Tran
;
Chao, Paul C. -P.
;
Su, Chin-I
;
Zan, Hsiao-Wen
;
電機工程學系
A fast mixed-signal readout circuit for high sensitivity organic vertical nano-junctions (VNJ) ammonia sensor detection is proposed in this study. Accompanying with the ammonia sensor, a low power, fast response and high resolution readout circuit is designed and successfully taped-out in this study. The analog front-end circuit includes a pre-amplifier, a sample and hold (S/H) circuit, a differential current, a pulse width modulation (PWM) circuit, an automatically sensing and reset (S/R) circuit. The digital back-end is realized by cell-based technology to compute and display concentration values instantaneously. The chip is fabricated by the TSMC 0.18-um 1P6M 3.3V mixed-signal CMOS process technique for verification. The chip area is 1.5 x 1.6 mm(2). while power consumption is 3.2 mW. Experiment results show a strong linear relationship exists between differential S/R output slope and the gas concentration level in a logarithm scale, which is critically beneficial to sensor design. In results, the readout circuit has fast responses, 50 seconds, based on the auto-sensing circuit catching different slope coefficient of the signal in transient time. The resolution is 70.48mV/log(ppm) while error rate, average noise and detection rate reliability are 2.86%, 123 mu Vrms, and 99.6%, respectively. This chip could be suitable for applications in cars, cell phones, watches, etc.