Browsing by Author "Su, David"

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Application of secondary electron potential contrast on junction leakage isolation
(2009-09-21)
Liu, Po-Tsun
;
Lee, Jeng-Han
;
Huan, Y. S.
;
Su, David
;
光電工程學系
Secondary electron potential contrast (SEPC) technology with an in situ dynamic trigger was studied to inspect P(+)/N-well junction leakage arising from P-well misalignment in a static random access memory cell. Combining SEPC with scanning electron microscopy observations allows direct identification of the junction shift. Furthermore, an in situ negative bias applied to the P-well can create a wider depletion region and eliminate the leakage path in P(+)/N-well contacts, allowing the P(+)/N well to operate normally. This proposed in situ dynamic trigger method is a promising and effective approach to investigating device physics under a dynamic scope. (C) 2009 American Institute of Physics. [doi:10.1063/1.3233963]
Surface Potential and Electric Field Mapping of p-well/n-well Junction by Secondary Electron Potential Contrast and in-situ Nanoprobe biasing
(2012-01-01)
Lee, Jeng-Han
;
Liu, Po-Tsun
;
Wang, M. H.
;
Lin, Y. T.
;
Huan, Y. S.
This study investigates the p-well/n-well junction by using secondary electron potential contrast (SEPC) with in-situ nanoprobe biasing. Experimental result demonstrated dopant contrast is restored after applying electricity in the junction nodes. Furthermore, the image contrast was converted to a voltage scale, allowing the junction surface potential and electric filed distribution to be identified. The proposed method demonstrates that an in-situ nanoprobe system is powerful in dopant area inspection in SEM, potentially contributing to an efficient method in analyzing site-specific failure in real circuits.