Browsing by Author "Su, Huan-Fu"

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Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication
(2017-01-01)
Wang, Huan-Chung
;
Su, Huan-Fu
;
Luc, Quang-Ho
;
Lee, Ching-Ting
;
Hsu, Heng-Tung
An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications. (c) The Author(s) 2017. Published by ECS. All rights reserved.