Browsing by Author "Su, J. Y."

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4-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCO
(2006)
Meng, C. C.
;
Tseng, S. C.
;
Chang, Y. W.
;
Su, J. Y.
;
Huang, G. W.
The fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The quadrature VCO at 4.1 GHz has phase noise of -120 dBc/Hz at 1MHz offset frequency, output power of 2 dBm and the figure of merit (FOM) -178 dBc/Hz.
Low-phase-noise transformer-based top-series QVCO using GaInP/GaAs HBT technology
(2007-01-01)
Meng, C. C.
;
Tseng, S. C.
;
Chang, Y. W.
;
Su, J. Y.
;
Huang, G. W.
The fully integrated GaInP/GaAs heterojunction bipolar transistor, transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The QVCO at 4.1 GHz has phase noise of - 120 dBc/Hz at 1 MHz offset frequency, output power of 2 dBm and the figure of merit -178 dBc/Hz. (c) 2006 Wiley Periodicals, Inc.
RF characteristics of BJT devices with selectively or fully ion-implanted collector
(2005)
Meng, C. C.
;
Su, J. Y.
;
Tsou, B. C.
;
Huang, G. W.
;
電信工程研究所
A selectively ion-implanted collector (SIC) is implemented in a 0.8 um BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better ft and fmax than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The fmax is 9.5GHz and ft is 7.8 GHz for the SIC BJT device while the fmax is 7.2 GHz and fmax is 4.5 GHz for the FIC BJT device when biased at Vce=3.6 V and Jc=0.09 mA/um(2). The nois parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.