Browsing by Author "Su, JL"

Now showing 1 - 3 of 3

Application of selective liquid-phase deposition to fabricate contact holes without plasma damage
(1999-06-01)
Yeh, CF
;
Liu, CH
;
Su, JL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work develops an alternative method, selective liquid-phase deposition (S-LPD), to fabricate contact holes instead of reactive ion etching. In preliminary experiments, deep n(+)/p junction diodes with contact holes prepared by S-LPD exhibit much less reverse current, unity ideality factor, larger forward current, lower contact resistance, and higher thermal stability than those prepared by reactive ion etching. Further superiority of plasma damage-free near-surface regions is also investigated using Schottky and ultrashallow junction diodes. Experimental results indicate that S-LPD can be applied to the submicron contact-hole process. The data after reverse bias temperature stress reveals the satisfactory reliability of S-LPD contact holes. This work demonstrates that the S-LPD technology is a highly promising means of replacing reactive ion etching processes to form submicron contact holes as reliably as those by wet-etching. (C) 1999 The Electrochemical Society. S0013-4651(98)08-119-1. All rights reserved.
Novel contact hole fabrication using selective liquid-phase deposition instead of reactive ion etching
(1999-01-01)
Yeh, CF
;
Liu, CH
;
Su, JL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work forms a contact hole utilizing the selectively liquid-phase deposited (S-LPD) silicon-oxide technique instead of the conventional reactive ion etching (RIE), The n(+)/p junction diode with contact hole formed by S-LPD exhibits one order less reverse current, larger forward current, smaller ideality factor, and better thermal stability than that formed by RIE. The Schottky junction with S-LPD contact hole also possesses several excellent characteristics, including ideality factor, reverse current and barrier height, even without sintering treatment. These characteristics confirm the effectiveness of S-LPD technique in replacing conventional RIE to form contact holes, particularly for the ultra-shallow junction in future.
Selective SiO2-xFx growth with liquid-phase deposition for MEMS technology
(1996)
Yeh, CF
;
Lee, YC
;
Su, JL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics