Browsing by Author "Su, JS"

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A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's
(1996-01-01)
Lee, RGH
;
Su, JS
;
Chung, SS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Previous studies showed that simultaneous determination of the interface states (N-it) and oxide-trapped charges (Q(ox)) in the vicinity of the drain side in MOS devices was rather difficult, A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced N-it and Q(ox) is presented, Submicron LDD n-MOS devices were tested and charge pumping measurements were performed, The spatial distributions of both N-it and Q(ox) have been justified by two-dimensional (2-D) device simulation of the I-V characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for devices.