Browsing by Author "Su, Nai-Chao"

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A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
(2010-03-01)
Su, Nai-Chao
;
Wang, Shui Jinn
;
Chin, Albert
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-mu s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-kappa layers.
Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
(2010-07-01)
Su, Nai-Chao
;
Wang, Shui-Jinn
;
Huang, Chin-Chuan
;
Chen, Yu-Han
;
Huang, Hao-Yuan
A flexible thin-film transistor (TFT) was made by integrating a high-kappa HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm(2)/V . s, and an acceptable ON/OFF current ratio of 2 x 10(5). The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.
The Role of High-kappa TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
(2010)
Su, Nai-Chao
;
Wang, Shui-Jinn
;
Huang, Chin-Chuan
;
Chen, Yu-Han
;
Huang, Hao-Yuan
In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Ti(x)Hf(1-x)O (x = 0.63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1 cm(2) V(-1) s(-1), and an ON/OFF current ratio of 10(5). The small subthreshold swing and low positive threshold voltage are attributed to the higher value of kappa of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications. (C) 2010 The Japan Society of Applied Physics