Browsing by Author "Su, Wei Fang"

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High Mobility SnO2 TFT for Display and Future IC
(2016)
Chin, Albert
;
Shih, Cheng Wei
;
Lu, Chun Fu
;
Su, Wei Fang
;
電子工程學系及電子研究所
Very high mobility of 149 +/- 189 cm(2)/Vs, large on-to-off current ratio (I-ON/I-OFF) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2 similar to 2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO2/Si nMOSFET, operated typically at >= 1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO2 transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.
Low-Temperature Processed Tin Oxide Transistor With Ultraviolet Irradiation
(2019-06-01)
Shih, Cheng Wei
;
Yen, Te Jui
;
Chin, Albert
;
Lu, Chun Fu
;
Su, Wei Fang
Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm(2)/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/OFF-current values of 3 x 10(6) and 7 x 10(5) was achieved for the SnO2 TFT at low processing temperatures of 180 degrees C and 100 degrees C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.
Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
(2018-01-17)
Shih, Cheng Wei
;
Chin, Albert
;
Lu, Chun Fu
;
Su, Wei Fang
;
電子工程學系及電子研究所
High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (mu(FE)) of 7.6 cm(2)/Vs, 140 mV/dec subthreshold slope, and 3 x 10(4) on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded mu(FE), because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole mu(FE) of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.
Remarkably high mobility ultrathin-film metal-oxide transistor with strongly overlapped orbitals
(2016-01-08)
Shih, Chen Wei
;
Chin, Albert
;
Lu, Chun Fu
;
Su, Wei Fang
;
電子工程學系及電子研究所
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I-ON/I-OFF of 2.3 x 10(7), small 110 mV/dec sub-threshold slope, and a low V-D of 2.5V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.