Browsing by Author "Su, Wei-Long"

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Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-splitting Calculations for GaN Wurtzite Materials
(2012-02-01)
Chen, Chun-Nan
;
Chang, Sheng-Hsiung
;
Su, Wei-Long
;
Wang, Wan-Tsang
;
Kao, Hsiu-Fen
The bulk inversion asymmetry (Dresselhaus) terms (i.e., B-2, B-1, and B'(1) terms) of wurtzite materials are determined. The 2 x 2 conduction band, 2 x 2 heavy-hole band, 2 x 2 light-hole band, and 2 x 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 x 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.
General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green's Function
(2011-06-01)
Chen, Chun-Nan
;
Su, Wei-Long
;
Lee, Meng-En
;
Jen, Jen-Yi
;
Li, Yiming
A theoretical method for the calculation of quantum transport in an ellipsoidal valley is presented. This method is developed using a non-equilibrium Green's function framework. Importantly, it is instructive that k(z) is separated into two parts so that the wrong figure shape of the transmission coefficients does not exist. The L-electron effect on AlAs-GaAs-AlAs double barrier structures oriented in the [001], [111], and [110] growth directions is explored using the proposed method. (C) 2011 The Japan Society of Applied Physics
k center dot p Zincblende Hamiltonian and Optical Matrix with Bulk Inversion Asymmetry
(2011-08-01)
Chen, Chun-Nan
;
Su, Wei-Long
;
Lee, Meng-En
;
Jen, Jen-Yi
;
Li, Yiming
A conventional 8 x 8 k.p zincblende Hamiltonian is corrected to include the bulk (or intracell) inversion asymmetry. Meanwhile, a conventional 8 x 8 k.p zincblende optical matrix is also corrected to include this intracell asymmetry. (C) 2011 The Japan Society of Applied Physics
k.p WURTZITE HAMILTONIAN AND OPTICAL MATRIX WITH BULK INVERSION ASYMMETRY
(2012-01-10)
Chen, Chun-Nan
;
Su, Wei-Long
;
Wang, Wan-Tsang
;
Jen, Jen-Yi
;
Li, Yiming
A k.p wurtzite Hamiltonian including the bulk (or intracell) inversion asymmetry is developed. Meanwhile, a k.p wurtzite optical matrix including this intracell asymmetry is also established.
Multiband treatment of quantum transport in anisotropic semiconductors: Non-equilibrium Green's function
(2013-07-01)
Chen, Chun-Nan
;
Chang, Sheng-Hsiung
;
Su, Wei-Long
;
Jen, Jen-Yi
;
Li, Yiming
Using the non-equilibrium Green's function and anti-bonding orbital model, a multiband treatment of quantum transport in an anisotropic semiconductor (Si-based) system is developed. In this study, we adopt Chiang's boundary treatment of the open boundary system into the non-equilibrium Green's function framework, and then an easy and powerful multiband treatment method is developed to solve the transmission coefficient of Si-based semiconductor quantum structures. (C) 2012 Elsevier Ltd. All rights reserved.
Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor
(2012-09-01)
Chen, Chun-Nan
;
Chang, Sheng-Hsiung
;
Su, Wei-Long
;
Jen, Jen-Yi
;
Li, Yiming
In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.