Browsing by Author "Suen, YW"

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A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well
(2000-02-01)
Suen, YW
;
Young, CC
;
Chang, CJ
;
Wu, JC
;
Wang, SY
We will present the observation of a light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the mete-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region. (C) 2000 Elsevier Science B.V. All rights reserved.
High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems
(2004-11-01)
Hsieh, WH
;
Kuan, CH
;
Suen, YW
;
Chang, SY
;
Li, LC
We present a high-sensitivity microwave vector detection system for studying the low-dimensional electron system embedded in the gaps of a coplanar waveguide at low temperatures. Using this system, we have achieved 0.005% and 0.001degrees resolutions in amplitude and phase variations, respectively, at 10 GHz in a magnetotransport measurement on a quantum-wire array with an average signal power less than -75 dBm into the sample at 0.3 K. From the measured phase variation, we can distinguish a very tiny change in the induced dipole moment of each quantum wire. (C) 2004 American Institute of Physics.
Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates
(2002-10-14)
Lin, SD
;
Lee, CP
;
Hsieh, WH
;
Suen, YW
;
電子工程學系及電子研究所
The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics.