Browsing by Author "Sun, Cheng-Yen"

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Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method
(2008-07-30)
Chang, Kow-Ming
;
Lin, Jian-Hong
;
Sun, Cheng-Yen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Process temperature and thermal budget control are very important for high-k dielectric device manufacturing. This work focuses on the characteristics of low temperature activated nickel silicide/silicon (M/S) interface formed by implant into silicide (IIS) method. By combining SIMS, C-V, I-V, and AFM measurements in this work, it provides a clear picture that the high dopant activation ratio can be achieved at low temperature (below 600 degrees C) by IIS method. From SIMS and C-V measurements, high dopant activation behavior is exhibited, and from I-V measurement, the ohmic contact behavior at the M/ S junction is showed. AFM inspection displays that under 2nd RTA 700 degrees C 30 s no agglomeration occurs. These results suggest that IIS method has the potential to integrate with high-k dielectric due to its low process temperature. It gives an alternate for future device integration. (C) 2008 Elsevier B. V. All rights reserved.