<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

Browsing by Author "Sung, J."

Now showing 1 - 1 of 1
  • Thumbnail Image
    Item type:Item,
    Microwave Annealing
    (2012)
    Lee, Yao-Jen
    ;
    Cho, T. -C.
    ;
    Chuang, S. -S.
    ;
    Hsueh, F. -K.
    ;
    Lu, Y. -L.
    Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, P-31, and BF2 implants in Si substrate were annealed by MWA at temperatures below 550 degrees C.