Browsing by Author "Sung, WJ"

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A dopant-related defect in Te-doped AlInP
(1999-08-01)
Wu, YR
;
Sung, WJ
;
Wen, TC
;
Lee, SC
;
Lee, WI
A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-doped AlInP is verified to be a dopant-related defect.
Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
(2002-06-01)
Sung, WJ
;
Huang, KF
;
Tseng, TY
;
電子物理學系
;
Department of Electrophysics
The properties of deep electron trapping centers of Te-doped (AlxGa1-x)(0.5)In0.5P (x = 0.5) layers grown by metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165 +/- 0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)(0.5)In0.5P (,v = 0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)(0.5)In0.5P.
Deep hole traps created by gamma-ray irradiation of GaInP
(2001-12-01)
Sung, WJ
;
Liu, TY
;
Yang, SL
;
Huang, KF
;
Tseng, TY
Deep hole traps, created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples, According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts.
Gamma-ray induced deep electron traps in GaInP
(2001-09-01)
Sung, WJ
;
Liu, TY
;
Yang, SL
;
Huang, KF
;
Tseng, TY
Deep electron traps created by gamma-ray irradiation of Au/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples. trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GaInP contacts.
Majority- and minority-carrier traps in Te-doped AlInP
(1999-01-11)
Wu, YR
;
Sung, WJ
;
Lee, WI
;
電子物理學系
;
友訊交大聯合研發中心
The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24+/-0.05 and 0.25+/-0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect. (C) 1999 American Institute of Physics. [S0003-6951(99)05202-X].
Mg-related deep levels in AlInP
(1999-07-01)
Wu, YR
;
Sung, WJ
;
Lee, SC
;
Li, TJ
;
Lee, WI
The properties of deep levels found in Mg-doped AlInP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled E1 and E2, were observed, with the activation energy of 0.19 and 0.514 eV, respectively. From distribution profiles measured on trap E1, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap E1 and E2 concentration increase with elevating Mg-dopant concentration Thus, it seems that these deep levels originate from Mg-related defects.
Phosphorus vacancy as a deep level in AlInP layers
(2000-06-15)
Sung, WJ
;
Wu, YR
;
Lee, SC
;
Wen, TC
;
Li, TJ
Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.
Thermal-treatment induced deep electron traps in AlInP
(2001-08-01)
Sung, WJ
;
Huang, KF
;
Lin, WJ
;
Tseng, TY
;
電子物理學系
The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500 degreesC and shall be attributed to the generation of phosphorus vacancies (V-p) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behavior, thus allowing us to determine an appropriate process for manufacturing AlInP-based products.