Browsing by Author "Sung, Wei Kung"

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Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layer
(2017-06-01)
Lee, Ming Ling
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Chen, Hsiang
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Kao, Chyuan Haur
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Mahanty, Rama Krushna
;
Sung, Wei Kung
In this study, we proposed a metal-oxide high-k-oxide-silicon (MOHOS) memory device using a nickel oxide film as the charge trapping layer, and studied the effect of post-deposition rapid thermal annealing (RTA) on the physical and electrical properties. The physical properties were investigated via multiple material analysis techniques such as X-ray diffraction and atomic force microscopy. The optimal annealing temperature for depositing the charge trapping layer was determined through a thorough investigation of the memory window, program/erase (P/E) cycle, crystalline structure, and material composition. Compared to the as-deposited NiO2 film, a MOHOS-type memory device annealed at 900 degrees C in a nitrogen atmosphere exhibited improved memory characteristics, in terms of a larger window in the capacitance-voltage hysteresis, better data retention (lower charge loss of 11%), faster program and erase cycles, and endurance characteristics (104 P/E cycles) without any significant drift in the flat band voltage. Therefore, the MOHOS memory device with a NiO2 trapping layer is a very promising candidate for future memory device applications. (C) 2017 Elsevier Ltd. All rights reserved.
The CeO2 Sensing Membrane in Electrolyte-Insulator-Semiconductor for Bio-Sensor Applications
(2014)
Liu, Che Chun
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Lee, Ming Ling
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Chang, Kow Ming
;
Chang, Shan Wei
;
Chen, Hsiang
In the paper, the EIS structure with high-k CeO2 sensing film has more responsive to H+ relative to Na+ and K+. The CeO2 sensing membrane annealed with O-2 at 800 degrees C shows a higher sensitivity of 58.76 mV/pH, higher linearity, lower hysteresis voltage of 5.97 mV and lower drift rate of 0.96 mV/hr than the other conditions.
The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applications
(2014)
Lin, Chih Ju
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Lee, Ming Ling
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Chang, Kow Ming
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Chang, Shan Wei
;
Chen, Hsiang
In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900 degrees C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.